Browsing by Author "Toeller, Michael"
- Results per page
- Sort Options
Publication Crystallization and semiconductor-metal switching behavior of thin VO2 layers grown by atomic layer deposition
Journal article2014, Thin Solid Films, 550, p.59-64Publication Evidences of anodic-oxidation reset mechanism in TiN\NiO\Ni RRAM cells
Proceedings paper2011, Symposium on VLSI Technology, 13/06/2011, p.24-25Publication High performance oxide diode
Proceedings paper2013, Solid State Devices and Materials Conference - SSDM, 24/09/2013, p.586-587Publication Hydrogen-induced resistive switching in TiN/ALD HfO2/PEALD TiN RRAM device
; ; ; ; Kittl, JorgeJournal article2012, IEEE Electron Device Letters, (33) 4, p.483-485Publication Influence of process parameters on low current resistive switching in MOCVD and ALD NiO Films
Proceedings paper2011, New Functional Materials and Emerging Device Architectures for Nonvolatile Memories, 25/04/2011, p.1337-q07-09Publication Metal-insulator transition in ALD VO2 ultrathin films and nanoparticles: morphological control
Journal article2015, Advanced Functional Materials, (25) 5, p.679-686Publication Metal-organic chemical vapor deposition of Ti-doped NiO layers for application in resistive switching memories
Proceedings paper2010, Physics and Technology of High-k Materials 8, 10/10/2010, p.313-322Publication NiO thin films synthesized by atomic layer deposition using Ni(dmamb)2 and O3 as precursors
Journal article2012, Chemical Vapor Deposition, (18) 1_3, p.61-69Publication Process study and characterization of VO2 thin films synthesized by ALD using TEMAV and O3 precursors
Journal article2012, ECS Journal of Solid State Science and Technology, (1) 4, p.P169-P174Publication Vanadium dioxide for selector applications
Meeting abstract2013, 224th ECS Fall Meeting, 27/10/2013, p.2179Publication Vanadium oxide thin films grown by ALD using TEMAV and O3 or H2O precursors
Meeting abstract2012, AVS 59th Annual International Symposium and Exhibition, 28/10/2012, p.TF-ThP1