Browsing by Author "Trauwaert, Marie-Astrid"
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Publication A Study on the Microscopical and Macroscopical Effects of Hydrogenation on the Performance of Multicrystalline Solar Cells
Proceedings paper1994, 1st World Conference on Photovoltaic Energy Conversion. Conference Record of the 24thIEEE Photovoltaic Specialists Conference, 5/12/1994, p.1621-1624Publication Defects in As-grown silicon and their evolution during heat treatments
Publication Differential interference contrast microscopy of defects in As-grown and annealed Si wafers
Proceedings paper1997, Proceedings of the 7th International Autumn Meeting : Gettering and Defect Engineering in Semiconductor Technology - GADEST '97, 5/10/1997, p.387-392Publication Evaluation of Si surface conditions by the use of surface photovoltage technique
Proceedings paper1998, Proceedings of the 5th International Symposium on Cleaning Technology in Semiconductor Device Manufacturing, 31/08/1997, p.455-462Publication Generation and annealing behaviour of MeV proton and 252Cf irradiation induced deep levels in silicon diodes
Journal article1994, IEEE Transactions on Nuclear Science, (41) 3, p.479-486Publication Generation and annealing behaviour of MeV proton and 252Cf irradiation induced deep levels in silicon diodes
Proceedings paper1994, 2nd European Conference on Radiation and its Effects on Components and Systems - RADECS, 13/09/1993, p.199-206Publication In-line monitoring of HF-last cleaning of implanted and non-implanted silicon surfaces by non-contact surface charge measurements
Proceedings paper1998, Proceedings of the 5th International Symposium on Cleaning Technology in Semiconductor Device Manufacturing, 31/08/1997, p.221-228Publication Influence of oxygen and carbon on the generation and annihilation of radiation defects in silicon
Journal article1996, Materials Science and Engineering B, 36, p.196-199Publication Low Temperature Anneal of Electron Irradiation Induced Defects in p-Type Silicon
Oral presentation1994, 1st International Conference on Materials for Microelectronics; October 17-19, 1994; Barcelona, Spain.Publication Low temperature anneal of electron irradiation induced defects in p-type silicon
Journal article1998, Materials Science and Technology, (14) 12, p.1295-1298Publication Low Temperature Anneal of the Divacancy in p-Type Silicon
Oral presentation1994, Annual Meeting Belgian Physical Society; May 26-27, 1994; Mons, Belgium.Publication Low temperature anneal of the divacancy in p-type silicon
Proceedings paper1995, Defect- and Impurity-Engineered Semiconductors and Devices, 17/04/1995, p.953-958Publication Low-temperature anneal of the divacancy in p-type silicon: a transformation from V2 to VxOy complexes
Journal article1995, Applied Physics Letters, (66) 22, p.3057-8Publication Low-temperature annealing studies in the divacancy in p-type silicon
Trauwaert, Marie-AstridOral presentation1996, des 31. Arbeitskreises Punkdefekte; June 12-13, 1996; Stuttgart, Germany.Publication Measurement, modelling and simulation of defects in as-grown Czrochalski silicon
Publication On the behaviour of the divacancy in silicon during anneals between 150 and 350 C
Proceedings paper1995, ICDS-18. Proceedings 18th International Conference on Defects in Semiconductors - ; July 23 -28, 1995; Sendai, Japan., 23/07/1995, p.1147-1152Publication Radiation and Impurity Related Deep Levels in Si: A Deep Level Transient Spectroscopy Study Correlated with Other Spectroscopic Techniques
Trauwaert, Marie-AstridPHD thesis1995-12Publication Study of point defects in silicon by means of positron annihilation with core electrons