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Browsing by Author "Trinkhaus, H."

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    Strained Si on relaxed SiGe made by ion implantation and strain transfer

    Mantl, S.
    ;
    Buca, D.
    ;
    Holländer, B.
    ;
    Mörschbächer, M.
    ;
    Trinkhaus, H.
    ;
    Luysberg, M.
    ;
    Hueging, N.
    Proceedings paper
    2004-10, SiGE: Materials, Processing, and Devices, 3/10/2004, p.731-740
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    Study of the relaxation of strain in patterned Si/SiGe structures using an x-ray diffraction technique

    Rehman Khan, Aaliya
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    Stangl, J.
    ;
    Bauer, G.
    ;
    Buca, D.
    ;
    Holländer, B.
    ;
    Trinkhaus, H.
    ;
    Mantl, S.
    Journal article
    2007, Semiconductor Science and Technology, (22) 1, p.S212-S215

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