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Browsing by Author "Van Houdt, Jan"

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    3D memories and ferroelectrics

    Van Houdt, Jan  
    Proceedings paper
    2017, International Memory Workshop - IMW, 14/05/2017
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    A 180nm secondary electron injection flash device

    Xue, Gang
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    Van Houdt, Jan  
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    Haspeslagh, Luc  
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    Wellekens, Dirk  
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    Keppens, Bart
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    Maes, Herman
    Proceedings paper
    2001, IEEE Non-Volatile Semiconductor Memory Workshop, 12/08/2001, p.62-63
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    A 1Mbit HIMOS® flash memory embedded in a 0.35μm CMOS process

    Van Houdt, Jan  
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    Tsouhlarakis, Jorgo  
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    Hendrickx, Paul  
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    Vanhorebeek, Guido
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    Wellekens, Dirk  
    Oral presentation
    2000, 17th IEEE Nonvolatile Semiconductor Memory Workshop; 13-17 February 2000; Monterey, Ca, USA.
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    A 25ns/byte-programmable low-power SSI flash array with a new low-voltage erase scheme for embedded memory applications

    Van Houdt, Jan  
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    Haspeslagh, Luc  
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    Wellekens, Dirk  
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    Vanhorebeek, Guido
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    Groeseneken, Guido  
    Proceedings paper
    1995, 14th IEEE Nonvolatile Semiconductor Memory Workshop, 13/08/1995, p.2.2
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    A 5 V-Compatible Flash EEPROM Cell with Microsecond Programming Time for Embedded Memory Applications

    Van Houdt, Jan  
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    Wellekens, Dirk  
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    Faraone, Lorenzo
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    Haspeslagh, Luc  
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    Deferm, Ludo  
    Journal article
    1994, IEEE Trans. Components, Packaging, and Manufacturing Techn. Part A, (17) 3, p.380-389
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    A CMOS DC voltage doubler with nonoverlapping switching control

    Kim, Shi-Ho
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    Tsouhlarakis, Jorgo  
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    Van Houdt, Jan  
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    Maes, Herman
    Journal article
    2001, IEICE Trans. Electronics, (E84C) 2, p.274-277
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    A comprehensive understanding of the erase of TANOS memories through charge separation experiments and simulations

    Padovani, Andrea
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    Arreghini, Antonio  
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    Vandelli, Luca
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    Larcher, Luca
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    Van den Bosch, Geert  
    Journal article
    2011, IEEE Transactions on Electron Devices, (58) 9, p.3147-3155
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    A comprehensive variability study of doped HfO2 FeFET for memory applications

    Ronchi, Nicolo  
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    Ragnarsson, Lars-Ake  
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    Celano, Umberto  
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    Kaczer, Ben  
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    Kaczmarek, Jakub  
    Proceedings paper
    2022, 14th IEEE International Memory Workshop (IMW), MAR 15-18, 2022, p.85-88
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    A consistent model for oxide trap profiling with the trap spectroscopy by charge injection and sensing (TSCIS) technique

    Cho, Moon Ju
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    Degraeve, Robin  
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    Roussel, Philippe  
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    Govoreanu, Bogdan  
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    Kaczer, Ben  
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    Zahid, Mohammed
    Journal article
    2010, Solid-State Electronics, (54) 11, p.1384-1391
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    A consistent model for the SANOS programming operation

    Furnemont, Arnaud  
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    Rosmeulen, Maarten  
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    Cacciato, Antonio
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    Breuil, Laurent  
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    De Meyer, Kristin  
    Proceedings paper
    2007, 22nd Non-Voltaile Semiconductor Memory Workshop - NVSMW, 27/08/2007, p.96-97
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    A discharge-based multi-pulse technique (DMP) for probing electron trap energy distribution in high-k materials for Flash memory applications

    Zheng, X. F.
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    Zhang, W. .D
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    Govoreanu, Bogdan  
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    Zhang, J. F.
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    Van Houdt, Jan  
    Proceedings paper
    2009, IEEE International Electron Devices Meeting - IEDM, 7/12/2009, p.139-142
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    A FeFET with a novel MFMFIS gate stack: towards energy-efficient and ultrafast NVMs for neuromorphic computing

    Ali, Tarek
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    Mertens, Konstantin
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    Kuehnel, Kati
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    Rudolph, Matthias
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    Oehler, Sebastian
    Journal article
    2021, NANOTECHNOLOGY, (32) 42
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    A figure of merit for flash memory multi-leyer tunnel dielectrics

    Govoreanu, Bogdan  
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    Blomme, Pieter  
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    Rosmeulen, Maarten  
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    Van Houdt, Jan  
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    De Meyer, Kristin  
    Proceedings paper
    2001, Proceedings of the International Conference on Simulation of Semiconductor Physics and Processes - SISPAD, 5/09/2001, p.270-273
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    A flash memory technology with quasi-virtual ground array for low-cost embedded applications

    Tsouhlarakis, Jorgo  
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    Vanhorebeek, Guido
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    Verhoeven, Geert
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    De Blauwe, Jan
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    Kim, Shi-Ho
    Journal article
    2001, IEEE Journal of Solid-State Circuits, (36) 6, p.969-978
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    A fully planar stacked gate flash technology with T-shaped floating gate for increased cell coupling ratio

    De Vos, Joeri  
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    Haspeslagh, Luc  
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    Blomme, Pieter  
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    Demand, Marc  
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    Devriendt, Katia  
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    Vleugels, Frank  
    Proceedings paper
    2007, Proceedings 2nd International Conference on Memory Technology and Design - ICMTD, 7/05/2007, p.243-245
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    A low voltage, high performance 0.35 μm embedded flash EEPROM cell technology

    Wellekens, Dirk  
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    Van Houdt, Jan  
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    De Blauwe, Jan
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    Haspeslagh, Luc  
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    Deferm, Ludo  
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    Maes, Herman
    Proceedings paper
    1998, 16th Nonvolatile Semiconductor Memory Workshop, 2/08/1998, p.106-108
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    A low-cost poly-sidewall erase HIMOSTM technology for 130-90nm embedded flash memories

    Van Houdt, Jan  
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    Haspeslagh, Luc  
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    Wellekens, Dirk  
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    De Vos, Joeri  
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    Hendrickx, Paul  
    Oral presentation
    2004, 20th IEEE Non-Volatile Semiconductor Memory Workshop - NVSMW
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    A model for tunneling current in multi-layer tunnel dielectrics

    Govoreanu, Bogdan  
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    Blomme, Pieter  
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    Rosmeulen, Maarten  
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    Van Houdt, Jan  
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    De Meyer, Kristin  
    Journal article
    2003, Solid-State Electronics, (47) 6, p.1045-1053
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    A new 2 isolated-bits/cell Flash memory device with self aligned split gate structure using ONO stacks for charge storage

    Breuil, Laurent  
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    Schuler, Franz
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    Haspeslagh, Luc  
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    Wellekens, Dirk  
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    De Vos, Joeri  
    Proceedings paper
    2003, 19th IEEE Nonvolatile Semiconductor Memory Workshop - NVSMW, 16/02/2003, p.46-47
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    A new quantitative model to predict SILC-related disturb characteristics in Flash E2PROM devices

    De Blauwe, Jan
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    Van Houdt, Jan  
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    Wellekens, Dirk  
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    Degraeve, Robin  
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    Roussel, Philippe  
    Proceedings paper
    1996, International Electron Devices Meeting - IEDM, 8/12/1996, p.343-346
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