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Browsing by Author "Van Meirhaeghe, R.L."

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    A study on (Co1-xNixSi2) Schottky contacts on N-Si(100) substrates

    Qu, Xin-Ping
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    Detavernier, C.
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    Van Meirhaeghe, R.L.
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    Cardon, F.
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    Lauwers, Anne  
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    Maex, Karen  
    Proceedings paper
    2001, Semiconductor Technology - ISTC, p.540-548
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    CoSi2 formation in the presence of carbon

    Detavernier, C.
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    Van Meirhaeghe, R.L.
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    Bender, Hugo  
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    Richard, Olivier  
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    Brijs, Bert
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    Maex, Karen  
    Journal article
    2002, Journal of Applied Physics, (92) 3, p.1207-1211
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    In situ studies of Pd/Ge layers for ohmic contact on GaAs and InGaAs

    Firrincieli, Andrea  
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    Simoen, Eddy  
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    Meuris, Marc  
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    Claeys, Cor
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    Opsomer, Karl  
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    Detavernier, C.
    Meeting abstract
    2009, 215th ECS Meeting, 24/05/2009, p.37
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    In-situ curvature and diffraction measurements on thin-film Ni/Ge(100) and Ni/Ge(111) solid state reactions

    Opsomer, Karl  
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    Deduytsche, D.
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    Detavernier, C.
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    Lavoie, C.
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    Lauwers, Anne  
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    Van Meirhaeghe, R.L.
    Meeting abstract
    2007, Materials for Advanced Metallization. Abstracts Book, 4/03/2007
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    Influence of Ge substrate crystallinity on Co germanide formation in solid-state reactions

    Opsomer, Karl  
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    Deduytsche, D.
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    Detavernier, C.
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    Van Meirhaeghe, R.L.
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    Lauwers, Anne  
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    Maex, Karen  
    Journal article
    2007, Applied Physics Letters, (90) 3, p.31906
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    Influence of processing conditions on CoSi2 formation in the presence of a Ti capping layer

    Detavernier, C.
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    Van Meirhaeghe, R.L.
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    Vandervorst, Wilfried  
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    Maex, Karen  
    Journal article
    2004, Microelectronic Engineering, (71) 3_4, p.252-261
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    Low-temperature formation of CoSi2 in the presence of Au

    Detavernier, C.
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    Lavoie, C.
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    d'Heurle, F.M.
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    Bender, Hugo  
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    Van Meirhaeghe, R.L.
    Journal article
    2004, Journal of Applied Physics, (95) 10, p.5340-5346
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    Metal in-diffusion during Fe and Co-germanidation of germanium

    Simoen, Eddy  
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    Opsomer, Karl  
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    Claeys, Cor
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    Maex, Karen  
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    Detavernier, C.
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    Van Meirhaeghe, R.L.
    Proceedings paper
    2008, Gettering and Defect Engineering in Semiconductor Technology XII, 14/10/2007, p.47-52
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    Mixing entropy and the nucleation of silicides: Ni-Pd-Si and Co-Mn-Si ternary systems

    Detavernier, C.
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    Qu, X.P.
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    Van Meirhaeghe, R.L.
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    Li, B.Z.
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    Maex, Karen  
    Journal article
    2003, Journal of Materials Research, (18) 7, p.1668-1678
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    Ni-germanide contacts on Ge: phase formation and electrical characterization

    Opsomer, Karl  
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    Simoen, Eddy  
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    Detavernier, C.
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    Lauwers, Anne  
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    Lavoie, C.
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    Van Meirhaeghe, R.L.
    Oral presentation
    2007, MRS Spring Meeting Symposium G: Extending Moore's Law with Alternative Channel Materials
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    Phase formation and thermal stability of ultrathin nickel-silicides on Si(100)

    De Keyser, K.
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    Van Bockstael, C.
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    Van Meirhaeghe, R.L.
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    Detavernier, C.
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    Verleysen, Eveline
    Journal article
    2010, Applied Physics Letters, (96) 17, p.173503
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    Point-defect generation in Ni-, Pd-, and Pt-germanide Schottky barriers on n-type germanium

    Simoen, Eddy  
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    Opsomer, Karl  
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    Claeys, Cor
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    Maex, Karen  
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    Detavernier, C.
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    Van Meirhaeghe, R.L.
    Journal article
    2007, Journal of the Electrochemical Society, (154) 10, p.H857-H861
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    Texture of atomic layer deposited ruthenium

    Musschoot, J.
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    Xie, Q.
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    Deduytsche, D.
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    De Keyser, K.
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    Longrie, D.
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    Haemers, J.
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    Van den Berghe, S.
    Journal article
    2010, Microelectronic Engineering, (87) 10, p.1879-1883
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    The barrier height inhomogeneity in identically prepared Au/n-GaAs Schottky barrier diodes

    Leroy, W.P.
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    Opsomer, Karl  
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    Forment, S.
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    Van Meirhaeghe, R.L.
    Journal article
    2005, Solid-State Electronics, (49) 6, p.878-883

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