Browsing by Author "Van Meirhaeghe, R.L."
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Publication A study on (Co1-xNixSi2) Schottky contacts on N-Si(100) substrates
Proceedings paper2001, Semiconductor Technology - ISTC, p.540-548Publication CoSi2 formation in the presence of carbon
Journal article2002, Journal of Applied Physics, (92) 3, p.1207-1211Publication In situ studies of Pd/Ge layers for ohmic contact on GaAs and InGaAs
Meeting abstract2009, 215th ECS Meeting, 24/05/2009, p.37Publication In-situ curvature and diffraction measurements on thin-film Ni/Ge(100) and Ni/Ge(111) solid state reactions
Meeting abstract2007, Materials for Advanced Metallization. Abstracts Book, 4/03/2007Publication Influence of Ge substrate crystallinity on Co germanide formation in solid-state reactions
Journal article2007, Applied Physics Letters, (90) 3, p.31906Publication Influence of processing conditions on CoSi2 formation in the presence of a Ti capping layer
Journal article2004, Microelectronic Engineering, (71) 3_4, p.252-261Publication Low-temperature formation of CoSi2 in the presence of Au
Journal article2004, Journal of Applied Physics, (95) 10, p.5340-5346Publication Metal in-diffusion during Fe and Co-germanidation of germanium
Proceedings paper2008, Gettering and Defect Engineering in Semiconductor Technology XII, 14/10/2007, p.47-52Publication Mixing entropy and the nucleation of silicides: Ni-Pd-Si and Co-Mn-Si ternary systems
Journal article2003, Journal of Materials Research, (18) 7, p.1668-1678Publication Ni-germanide contacts on Ge: phase formation and electrical characterization
Oral presentation2007, MRS Spring Meeting Symposium G: Extending Moore's Law with Alternative Channel MaterialsPublication Phase formation and thermal stability of ultrathin nickel-silicides on Si(100)
;De Keyser, K. ;Van Bockstael, C. ;Van Meirhaeghe, R.L. ;Detavernier, C.Verleysen, EvelineJournal article2010, Applied Physics Letters, (96) 17, p.173503Publication Point-defect generation in Ni-, Pd-, and Pt-germanide Schottky barriers on n-type germanium
Journal article2007, Journal of the Electrochemical Society, (154) 10, p.H857-H861Publication Texture of atomic layer deposited ruthenium
;Musschoot, J. ;Xie, Q. ;Deduytsche, D. ;De Keyser, K. ;Longrie, D. ;Haemers, J.Van den Berghe, S.Journal article2010, Microelectronic Engineering, (87) 10, p.1879-1883Publication The barrier height inhomogeneity in identically prepared Au/n-GaAs Schottky barrier diodes
Journal article2005, Solid-State Electronics, (49) 6, p.878-883