Browsing by Author "Van der Stricht, Wim"
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Publication Accelerated aging of InGaN/GaN LED by electrical stressing
Meeting abstract1999, 3rd International Conference on Nitride Semiconductors - ICNS3, 04/07/1999, p.120Publication Chemical ordering in wurtzite InxGa1-xN layers grown on (0001) sapphire by metalorganic vapor phase epitaxy
Journal article1998, Applied Physics Letters, (72) 14, p.1742-1744Publication Confocal microscopy and spectroscopy of InGaN epilayers on sapphire
;O'Donnell, K. P. ;Tobin, M. J. ;Bayliss, S. C.Van der Stricht, WimJournal article1999, Journal of Microscopy, (193) 2, p.105-108Publication Development of group III nitride technology for the realisation of light emitting diodes
Van der Stricht, WimPHD thesis1999-05Publication Effects of carrier gas on the properties of InGaN/GaN quantum well structures grown by MOCVD
;Duxbury, N. ;Dawson, P. ;Bangert, U. ;Thrush, E. J. ;Van der Stricht, WimJacobs, KoenJournal article1999, Physica Status Solidi B, (216) 1, p.355-359Publication Effects of carrier gas type on the properties of InGaN/GaN quantum well structures by MOCVD
;Duxbury, N. ;Dawson, P. ;Bangert, U. ;Thrush, E. J. ;Van der Stricht, WimJacobs, KoenMeeting abstract1999, 3rd International Conference on Nitride Semiconductors - ICNS3, 04/07/1999, p.130Publication Elastic strain in In0.18Ga0.82N layer: a combined x-ray diffraction and Rutherford backscattering/channeling study
Journal article1999, Appl. Phys. Lett., (74) 3, p.365-367Publication Elastic strain in InGaN and AlGaN layers
;Wu, Ming Fang ;Yao, S.; ;Hogg, S. ;Langouche, G. ;Van der Stricht, WimJacobs, KoenOral presentation1999, Fifth IUMRS International Conference on Advanced Materials; 13-18 June 1999; Beijing, China.Publication Elastic strain in InGaN and AlGaN layers
Journal article2000, Materials Science and Engineering B, (75) 2_3, p.232-235Publication Energy-dispersive x-ray imaging of an InGaN/GaN bilayer on sapphire
;O'Donnell, K. P. ;Middleton, P. G. ;Trager-Cowan, C. ;Young, C. ;Bayliss, S. C.Fletcher, I.Journal article1998, Applied Physics Letters, (73) 22, p.3273-3275Publication Epitaxial lateral overgrowth of GaN by OMVPE
Proceedings paper1998, Proceedings 3rd Annual Symposium of the IEEE/LEOS Benelux Chapter, 26/11/1998, p.149-152Publication Epitaxial laterial overgrowth of GaN by OMVPE
Proceedings paper1998, URSI Forum '98, 10/12/1998, p.32Publication Exciton localization and the Stokes' shift in InGaN epilayers
;Martin, R. W. ;Middleton, P. G. ;O'Donnell, K. P.Van der Stricht, WimJournal article1999, Appl. Phys. Lett., (74) 2, p.263-265Publication Getter stabilized zeolite materials for specialty GAS purification
;Vergani, G. ;Succi, M. ;Thrush, E. J. ;Crawley, J. A. ;Van der Stricht, Wim ;Torres, P.Kroll, U.Proceedings paper1997, Proceedings of the 43rd Annual Technical Meeting; 4-8 May 1997. Los Angeles, Calif., USA., p.262-272Publication Growth and characterisation of GaN and InGaN by metalorganic chemical vapour deposition for blue light emitting devices
Proceedings paper1996, Proceedings 1996 IEEE/LEOS Symposium. Annual Symposium of the IEEE/LEOS Benelux Chapter, 28/11/1996, p.50-53Publication Growth and in situ monitoring of GaN using IR interference effects
Journal article1998, Journal of Crystal Growth, (195) 1_4, p.192-198Publication Hexagonal growth hillocks in GaN epilayers
;Middleton, P. G. ;Trager-Cowan, C. ;Mohammed, A. ;O'Donnell, K. P.Van der Stricht, WimProceedings paper1997, III-V Nitrides, 2/12/1996, p.471-476Publication Hexagonal growth hillocks of MOCVD-grown GaN on (0001) sapphire
;Mohammed, A. ;Trager-Cowan, C. ;Middleton, P. G. ;O'Donnell, K. P.Van der Stricht, WimProceedings paper1997, Microscopy of Semiconducting Materials 1997, 7/04/1997, p.235-8Publication High indium content InGaN films and quantum wells
;Van der Stricht, Wim ;Jacobs, Koen; ; ;Considine, L.Thrush, E. J.Proceedings paper1998, Nitride Semiconductors, 1/12/1997, p.107-112Publication Indium segregation in InGaN quantum-well structures
;Duxbury, N. ;Bangert, U. ;Dawson, P. ;Thrush, E. J. ;Van der Stricht, WimJacobs, KoenJournal article2000, Applied Physics Letters, (76) 12, p.1600-1602
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