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Browsing by Author "Van der Stricht, Wim"

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    Accelerated aging of InGaN/GaN LED by electrical stressing

    Jacobs, Koen
    ;
    Cheyns, Jan
    ;
    Van der Stricht, Wim
    ;
    Moerman, Ingrid  
    ;
    Harrison, I.
    Meeting abstract
    1999, 3rd International Conference on Nitride Semiconductors - ICNS3, 04/07/1999, p.120
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    Chemical ordering in wurtzite InxGa1-xN layers grown on (0001) sapphire by metalorganic vapor phase epitaxy

    Ruterana, P.
    ;
    Nouet, G.
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    Van der Stricht, Wim
    ;
    Moerman, Ingrid  
    ;
    Considine, L.
    Journal article
    1998, Applied Physics Letters, (72) 14, p.1742-1744
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    Confocal microscopy and spectroscopy of InGaN epilayers on sapphire

    O'Donnell, K. P.
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    Tobin, M. J.
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    Bayliss, S. C.
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    Van der Stricht, Wim
    Journal article
    1999, Journal of Microscopy, (193) 2, p.105-108
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    Development of group III nitride technology for the realisation of light emitting diodes

    Van der Stricht, Wim
    PHD thesis
    1999-05
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    Effects of carrier gas on the properties of InGaN/GaN quantum well structures grown by MOCVD

    Duxbury, N.
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    Dawson, P.
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    Bangert, U.
    ;
    Thrush, E. J.
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    Van der Stricht, Wim
    ;
    Jacobs, Koen
    Journal article
    1999, Physica Status Solidi B, (216) 1, p.355-359
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    Effects of carrier gas type on the properties of InGaN/GaN quantum well structures by MOCVD

    Duxbury, N.
    ;
    Dawson, P.
    ;
    Bangert, U.
    ;
    Thrush, E. J.
    ;
    Van der Stricht, Wim
    ;
    Jacobs, Koen
    Meeting abstract
    1999, 3rd International Conference on Nitride Semiconductors - ICNS3, 04/07/1999, p.130
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    Elastic strain in In0.18Ga0.82N layer: a combined x-ray diffraction and Rutherford backscattering/channeling study

    Wu, Ming Fang
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    Vantomme, Andre  
    ;
    Hogg, S. M.
    ;
    Langouche, G.
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    Van der Stricht, Wim
    ;
    Jacobs, Koen
    Journal article
    1999, Appl. Phys. Lett., (74) 3, p.365-367
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    Elastic strain in InGaN and AlGaN layers

    Wu, Ming Fang
    ;
    Yao, S.
    ;
    Vantomme, Andre  
    ;
    Hogg, S.
    ;
    Langouche, G.
    ;
    Van der Stricht, Wim
    ;
    Jacobs, Koen
    Oral presentation
    1999, Fifth IUMRS International Conference on Advanced Materials; 13-18 June 1999; Beijing, China.
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    Elastic strain in InGaN and AlGaN layers

    Wu, Ming Fang
    ;
    Vantomme, Andre  
    ;
    Hogg, S.
    ;
    Langouche, G.
    ;
    Van der Stricht, Wim
    ;
    Jacobs, Koen
    Journal article
    2000, Materials Science and Engineering B, (75) 2_3, p.232-235
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    Energy-dispersive x-ray imaging of an InGaN/GaN bilayer on sapphire

    O'Donnell, K. P.
    ;
    Middleton, P. G.
    ;
    Trager-Cowan, C.
    ;
    Young, C.
    ;
    Bayliss, S. C.
    ;
    Fletcher, I.
    Journal article
    1998, Applied Physics Letters, (73) 22, p.3273-3275
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    Epitaxial lateral overgrowth of GaN by OMVPE

    Jacobs, Koen
    ;
    Van der Stricht, Wim
    ;
    Moerman, Ingrid  
    ;
    Demeester, Piet  
    ;
    Verstuyft, Steven  
    Proceedings paper
    1998, Proceedings 3rd Annual Symposium of the IEEE/LEOS Benelux Chapter, 26/11/1998, p.149-152
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    Epitaxial laterial overgrowth of GaN by OMVPE

    Jacobs, Koen
    ;
    Van der Stricht, Wim
    ;
    Moerman, Ingrid  
    ;
    Demeester, Piet  
    ;
    Verstuyft, Steven  
    Proceedings paper
    1998, URSI Forum '98, 10/12/1998, p.32
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    Exciton localization and the Stokes' shift in InGaN epilayers

    Martin, R. W.
    ;
    Middleton, P. G.
    ;
    O'Donnell, K. P.
    ;
    Van der Stricht, Wim
    Journal article
    1999, Appl. Phys. Lett., (74) 2, p.263-265
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    Getter stabilized zeolite materials for specialty GAS purification

    Vergani, G.
    ;
    Succi, M.
    ;
    Thrush, E. J.
    ;
    Crawley, J. A.
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    Van der Stricht, Wim
    ;
    Torres, P.
    ;
    Kroll, U.
    Proceedings paper
    1997, Proceedings of the 43rd Annual Technical Meeting; 4-8 May 1997. Los Angeles, Calif., USA., p.262-272
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    Growth and characterisation of GaN and InGaN by metalorganic chemical vapour deposition for blue light emitting devices

    Van der Stricht, Wim
    ;
    Moerman, Ingrid  
    ;
    Demeester, Piet  
    ;
    Crawley, J. A.
    ;
    Thrush, E. J.
    Proceedings paper
    1996, Proceedings 1996 IEEE/LEOS Symposium. Annual Symposium of the IEEE/LEOS Benelux Chapter, 28/11/1996, p.50-53
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    Growth and in situ monitoring of GaN using IR interference effects

    Considine, L.
    ;
    Thrush, E. J.
    ;
    Crawley, J. A.
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    Jacobs, Koen
    ;
    Van der Stricht, Wim
    ;
    Moerman, Ingrid  
    Journal article
    1998, Journal of Crystal Growth, (195) 1_4, p.192-198
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    Hexagonal growth hillocks in GaN epilayers

    Middleton, P. G.
    ;
    Trager-Cowan, C.
    ;
    Mohammed, A.
    ;
    O'Donnell, K. P.
    ;
    Van der Stricht, Wim
    Proceedings paper
    1997, III-V Nitrides, 2/12/1996, p.471-476
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    Hexagonal growth hillocks of MOCVD-grown GaN on (0001) sapphire

    Mohammed, A.
    ;
    Trager-Cowan, C.
    ;
    Middleton, P. G.
    ;
    O'Donnell, K. P.
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    Van der Stricht, Wim
    Proceedings paper
    1997, Microscopy of Semiconducting Materials 1997, 7/04/1997, p.235-8
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    High indium content InGaN films and quantum wells

    Van der Stricht, Wim
    ;
    Jacobs, Koen
    ;
    Moerman, Ingrid  
    ;
    Demeester, Piet  
    ;
    Considine, L.
    ;
    Thrush, E. J.
    Proceedings paper
    1998, Nitride Semiconductors, 1/12/1997, p.107-112
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    Indium segregation in InGaN quantum-well structures

    Duxbury, N.
    ;
    Bangert, U.
    ;
    Dawson, P.
    ;
    Thrush, E. J.
    ;
    Van der Stricht, Wim
    ;
    Jacobs, Koen
    Journal article
    2000, Applied Physics Letters, (76) 12, p.1600-1602
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