imec Institutional Repository Browsing {{ collection }} by Author "Vanhellemont, J."

Publication

A comparison of intrinsic point defect properties in Si and Ge

Vanhellemont, J.

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Spiewak, P.

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Sueoka, K.

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Simoen, Eddy

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Romandic, I.

Proceedings paper

2008, Doping Engineering for Front-End Processing, 24/03/2008, p.1070-E6-05

Publication

A novel approach to analyse FTIR spectra of precipitates in moderately and heavily doped silicon

De Gryse, O.

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Vanhellemont, J.

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Clauws, P.

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Lebedev, O.

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Van Landuyt, J.

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Simoen, Eddy

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Claeys, Cor

Journal article

2003, Physica B, 340-342, p.1013-1017

Publication

Carrier lifetime dependence on doping, metal implants and excitation density in Ge and Si

Gaubas, E.

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Vanhellemont, J.

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Simoen, Eddy

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Romandic, I.

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Geens, W.

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Clauws, P.

Journal article

2007, Physica B: Condensed Matter, 401-402, p.222-225

Publication

Carrier lifetime studies in diode structures on Si substrates with and without Ge doping

Uleckas, A.

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Gaubas, E.

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Rafi, J.M.

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Chen, J.

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Yang, D.

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Ohyama, H.

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Simoen, Eddy

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Vanhellemont, J.

Journal article

2011, Solid State Phenomena, 178-179, p.347-352

Publication

Chemical and structural characterization of oxide precipitates in heavily boron doped silicon by infrared spectroscopy and transmission electron microscopy

De Gryse, O.

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Clauws, P.

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Vanhellemont, J.

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Lebedev, O.

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Van Landuyt, J.

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Simoen, Eddy

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Claeys, Cor

Proceedings paper

2002, High Purity Silicon VII, 20/10/2002, p.183-194

Publication

Comparison of electron irradiation effects on diodes fabricated on silicon and on germanium doped silicon substrates

Ohyama, H.

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Rafi, J.M.

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Campabadal, F.

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Takakura, K.

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Simoen, Eddy

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Chen, J.

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Vanhellemont, J.

Journal article

2009, Physica B: Condensed Matter, (404) 23_24, p.4671-4673

Publication

Deep level transient spectroacopy of transition metal impurities in germanium

Clauws, P.

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Van Gheluwe, J.

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Lauwaert, J.

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Simoen, Eddy

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Vanhellemont, J.

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Meuris, Marc

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Theuwis, A.

Journal article

2007, Physica B: Condensed Matter, 401-402, p.188-191

Publication

Diode characteristics and thermal donor formation in germanium-doped silicon substrates

Rafi, J.-M.

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Vanhellemont, J.

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Simoen, Eddy

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Chen, Jimmy

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Yang, D.

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Zabala, M.

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China, E.

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Lechon, M.

Oral presentation

2011, 26th International Conference on Defects in Semiconductors - ICDS

Publication

Evaluation of Si surface conditions by the use of surface photovoltage technique

Trauwaert, Marie-Astrid

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Proceedings paper

1998, Proceedings of the 5th International Symposium on Cleaning Technology in Semiconductor Device Manufacturing, 31/08/1997, p.455-462

Publication

Field-enhanced electron capture for iron impurities in germanium

Lauwaert, J.

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Segers, S.

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Simoen, Eddy

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Depla, D.

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Vanhellemont, J.

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Clauws, P.

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Callens, F.

Meeting abstract

2011, Belgian Physical Society: General Scientific Meeting, 25/05/2011

Publication

Germanium doping for improved silicon substrates and devices

Vanhellemont, J.

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Chen, J.

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Lauwaert, J.

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Vrielinck, H.

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Xu, W.

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Yang, D.

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Rafi, J.M.

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Ohyama, H.

Journal article

2011, Journal of Crystal Growth, (317) 1, p.8-15

Publication

Grown-in lattice defects and diffusion in czochralski-grown germanium

Vanhellemont, J.

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De Gryse, O.

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Hens, S.

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Vanmeerbeek, P.

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Poelman, D.

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Clauws, P.

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Simoen, Eddy

Journal article

2004, Defect and Diffusion Forum, 230-232, p.149-176

Publication

Impact of firing on surface passivation of p-Si by SiO2/Al and SiO2/SiNx/Al stacks

Chen, Jiahe

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Cornagliotti, Emanuele

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Loozen, Xavier

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Simoen, Eddy

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Vanhellemont, J.

Journal article

2011, Journal of Applied Physics, (110) 12, p.126101

Publication

Impact of silicon substrate germanium doping on diode characteristics and on thermal donor formation

Rafi, J.M.

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Vanhellemont, J.

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Simoen, Eddy

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Chen, J.

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Zabala, M.

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Campabadal, F.

Journal article

2009, Physica B: Condensed Matter, (404) 23_24, p.4723-4726

Publication

On radiation damage in SiGe devices and its recovery behavior

Ohyama, H.

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Takami, Y.

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Vanhellemont, J.

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Simoen, Eddy

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Claeys, Cor

Oral presentation

2008, 8th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications

Publication

On the impact of metal impurities on the carrier lifetime in n-type germanium

Gaubas, E.

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Vanhellemont, J.

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Simoen, Eddy

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Theuwis, A.

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Clauws, P.

Proceedings paper

2007, Semiconductor Defect Engineering - Materials, Synthesis, Structures and Devices II, 9/04/2007, p.0994-F09-06

Browsing by Author "Vanhellemont, J."