Browsing by Author "Verbiest, T."
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Publication Difference in the nonlinear optical response of epitaxial Si on Ge(100) grown from SiH4 at 500°C and from Si3H8 at 350°C due to segregation of Ge
Journal article2009, Applied Physics Letters, (94) 6, p.61123Publication Second harmonic generation indicates a better Si/Ge interface quality for higher temperature and with N2 rather than with H2 as the carrier gas
Journal article2011, IEEE Electron Device Letters, (32) 1, p.12-14Publication Si passivation for Ge pMOSFETs: influence of Si precursor during RPCVD growth
Proceedings paper2010, 5th International SiGe Technology and Device Meeting - ISTDM, 24/05/2010Publication Tunneling of holes is observed by second-harmonic generation
Journal article2013, Applied Physics Letters, (102) 8, p.82104