Browsing by Author "Villaneuva, D."

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A novel model for boron diffusion in SiGe strained layers based on a kinetic driven Ge-B pairing mechanism

Villaneuva, D.
;
Moens, P.
;
Krishnasamy, Rajendran
;
Schoenmaker, Wim
Proceedings paper
2001, Proceedings of the International Conference on Simulation of Semiconductor Physics and Processes - SISPAD; 5-7 September 2001; A, p.22-25
Modeling of clustering reaction and diffusion of boron in strained Si1-xGex epitaxial layers

Krishnasamy, Rajendran
;
Villaneuva, D.
;
Moens, P.
;
Schoenmaker, Wim
Journal article
2003, Solid-State Electronics, (47) 5, p.835-839