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Modeling of clustering reaction and diffusion of boron in strained Si1-xGex epitaxial layers
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Modeling of clustering reaction and diffusion of boron in strained Si1-xGex epitaxial layers
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Date
2003
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Krishnasamy, Rajendran
;
Villaneuva, D.
;
Moens, P.
;
Schoenmaker, Wim
Journal
Solid-State Electronics
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1906
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Acq. date: 2025-12-10
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1906
since deposited on 2021-10-15
2
last month
Acq. date: 2025-12-10
Citations