Browsing by Author "Wang, Danghui"
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Publication Interfacial Properties of nMOSFETs With Different Al2O3 Capping Layer Thickness and TiN Gate Stacks
Journal article2021, IEEE TRANSACTIONS ON ELECTRON DEVICES, (68) 3, p.948-953Publication Low-frequency noise behavior of nMOSFETs with different Al2O3 capping layer thickness and TiN gate
Proceedings paper2019, 25th International Conference on Noise and Fluctuations ICNF2019, 18/06/2019, p.188-191Publication Temperature-Dependent Electrical Properties of nMOSFETs With Different Thickness Al2O3 Capping Layer and TiN Gate
; ; Claeys, CorJournal article2021, IEEE TRANSACTIONS ON ELECTRON DEVICES, (68) 12, p.6020-6025