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Interfacial Properties of nMOSFETs With Different Al2O3 Capping Layer Thickness and TiN Gate Stacks
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Interfacial Properties of nMOSFETs With Different Al2O3 Capping Layer Thickness and TiN Gate Stacks
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Date
2021
Journal article
https://doi.org/10.1109/TED.2020.3047356
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Wang, Danghui
;
Xu, Tianhan
;
Simoen, Eddy
;
Govoreanu, Bogdan
;
Claeys, Cor
;
Zhang, Yang
Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
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1616
since deposited on 2021-11-02
1
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Acq. date: 2025-12-13
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Metrics
Views
1616
since deposited on 2021-11-02
1
last month
Acq. date: 2025-12-13
Citations