Publication:

Interfacial Properties of nMOSFETs With Different Al2O3 Capping Layer Thickness and TiN Gate Stacks

Date

2021
Journal article
https://doi.org/10.1109/TED.2020.3047356
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dc.contributor.authorWang, Danghui
dc.contributor.authorXu, Tianhan
dc.contributor.authorSimoen, Eddy
dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorClaeys, Cor
dc.contributor.authorZhang, Yang
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.orcidextWang, Danghui::0000-0002-2783-9987
dc.contributor.orcidextClaeys, Cor::0000-0002-6634-4709
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2022-06-16T09:26:25Z
dc.date.available2021-11-02T16:04:00Z
dc.date.available2022-06-16T09:26:25Z
dc.date.issued2021
dc.identifier.doi10.1109/TED.2020.3047356
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/38102
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
dc.source.beginpage948
dc.source.endpage953
dc.source.issue3
dc.source.journalIEEE TRANSACTIONS ON ELECTRON DEVICES
dc.source.numberofpages6
dc.source.volume68
dc.subject.keywordsLOW-FREQUENCY NOISE
dc.subject.keywordsEXTRACTION
dc.subject.keywordsMETAL
dc.title

Interfacial Properties of nMOSFETs With Different Al2O3 Capping Layer Thickness and TiN Gate Stacks

dc.typeJournal article
dspace.entity.typePublication
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