Browsing by Author "Wang, Qingfeng"
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Publication A manufacturable process to improve thermal stability of 0.25-µm cobalt silicided poly gate
Journal article1995, IEEE Trans. Semiconductor Manufacturing, (8) 4, p.449-451Publication Effect of silicidation schemes on interface contact resistance
Proceedings paper1994, 24th European Solid State Device Research Conference - ESSDERC, 11/09/1994, p.283-286Publication Formation of deep submicrometer cobalt silicated poly gate using bilayer processes
Proceedings paper1995, Proceedings of the 5th International Symposium on Ultra Large Scale Integration Science and Technology, 21/05/1995, p.519-524Publication Manufacturability issues for application of silicides in 0.25 μm CMOS process and beyond
Proceedings paper1996, Silicide Thin Films - Fabrication, Properties, and Applications, 27/11/1995, p.221-231Publication New CoSi2 SALICIDE technology for 0.1 µm processes and below
Proceedings paper1995, 1995 Symposium on VLSI Technology. Digest of Technical Papers; 6-8 June 1995; Kyoto, Japan., p.17-18Publication Sub 0.1 mm nMOSFETs fabricated using experimental design techniques to optimise performance and minimise process sensitivity
Proceedings paper1995, 1995 Symposium on VLSI Technology. Digest of Technical Papers; 6-8 June 1995; Kyoto, Japan., p.105-106Publication Ti-salicide improvement by preamorphization for ULSI applications
Proceedings paper1996, Silicide Thin Films - Fabrication, Properties, and Applications, 27/11/1995, p.89-94Publication Ti/Co bilayers in salicide technology: electrical evaluation
Journal article1995, Applied Surface Science, 91, p.12-18