Browsing by Author "Watanabe, Kenji"
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Publication 2D-3D integration of hexagonal boron nitride and a high-kappa dielectric for ultrafast graphene-based electro-absorption modulators
;Agarwal, Hitesh ;Terres, Bernat ;Orsini, Lorenzo ;Montanaro, AlbertoSorianello, VitoJournal article2021, NATURE COMMUNICATIONS, (12) 1, p.1070Publication A practical application of multiple parameters profile characterization (MPPC) using CD-SEM on production wafers using Hyper-NA lithography
Proceedings paper2009, Metrology, Inspection and Process Control for Microlithography XXIII, 22/02/2009, p.72722EPublication Advanced CD-SEM metrology to improve total process control performance for hyper-NA lithography
;Osaki, Mayuka ;Tanaka, Maki ;Shishido, Chie ;Ishimoto, Toru ;Hasegawa, NorioSekiguchi, KoheiProceedings paper2008, Metrology, Inspection, and Process Control for Microlithography XXII, 24/02/2008, p.69221BPublication Asymmetric photoelectric effect: Auger-assisted hot hole photocurrents in transition metal dichalcogenides
Journal article2021, NANOPHOTONICS, (10) 1, p.105-113Publication Correlating Carrier Localization to Optoelectronic Behavior of Monolayer MoS2
;Singha, Arup ;Aparna, P ;Paul, Agniva ;Shetty, Sanjitha K. ;Watanabe, KenjiTaniguchi, TakashiJournal article2025, ACS APPLIED MATERIALS & INTERFACES, (17) 31, p.44816-44824Publication Electrically controlled emission from singlet and triplet exciton species in atomically thin light-emitting diodes
;Joe, Andrew Y. ;Jauregui, Luis A. ;Pistunova, Kateryna ;Valdivia, Andres M. MierLu, ZhengguangJournal article2021, PHYSICAL REVIEW B, (103) 16, p.L161411Publication Excitons in a reconstructed moire potential in twisted WSe2/WSe2 homobilayers
Journal article2021, NATURE MATERIALS, (20) 4, p.480-+Publication MuGFET Observation and CD measurement by using CD-SEM
;Maeda, Tatsuya ;Tanaka, Maki ;Isawa, Miki ;Watanabe, Kenji ;Hasegawa, NorioSekiguchi, KoheiProceedings paper2008-02, Metrology, Inspection, and Process Control for Microlithography XXII, 25/02/2008, p.69222PPublication Use of the indirect photoluminescence peak as an optical probe of interface defectivity in MoS2
Journal article2020, Advanced Materials Interfaces, (7) 18, p.2000413Publication Validation of CD-SEM etching residue evaluation technique for MuGFET structures
Proceedings paper2009, Metrology, Inspection and Process Control for Microlithography XXIII, 22/02/2009, p.72720Q