Browsing by Author "Yang, B."
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Publication Beyond interface: the impact of oxide border traps on InGaAs and Ge n-MOSFETs
Proceedings paper2012, International Electron Devices Meeting - IEDM, 10/12/2012, p.28.3Publication CAD for RF circuits
;Wambacq, P.; ;Philips, J. ;Roychowdhury, J.; ;Yang, B.Long, D.Proceedings paper2001, Design, Automation and Test in Europe, 2001. Conference and Exhibition 2001. Proceedings;, 13/03/2001, p.520-527Publication GeSn channel nMOSFETs: material potential and technological outlook
Proceedings paper2012, Symposium on VLSI Technology, 12/06/2012, p.95-96Publication Towards high mobility GeSn channel nMOSFETs: improved surface passivation using novel ozone oxidation method
;Gupta, Somya; ;Yang, B.; ;Gencarelli, Federica ;Lin, J.-Y. J.Chen, R.Proceedings paper2012, International Electron Devices Meeting - IEDM, 10/12/2012, p.16.2