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Browsing by Author "Yang, B."

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    Beyond interface: the impact of oxide border traps on InGaAs and Ge n-MOSFETs

    Lin, Dennis  
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    Alian, AliReza  
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    Gupta, S.
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    Yang, B.
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    Bury, Erik  
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    Sioncke, Sonja
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    Degraeve, Robin  
    Proceedings paper
    2012, International Electron Devices Meeting - IEDM, 10/12/2012, p.28.3
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    CAD for RF circuits

    Wambacq, P.
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    Vandersteen, Gerd  
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    Philips, J.
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    Roychowdhury, J.
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    Eberle, Wolfgang  
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    Yang, B.
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    Long, D.
    Proceedings paper
    2001, Design, Automation and Test in Europe, 2001. Conference and Exhibition 2001. Proceedings;, 13/03/2001, p.520-527
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    GeSn channel nMOSFETs: material potential and technological outlook

    Gupta, Somya
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    Vincent, Benjamin  
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    Lin, Dennis  
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    Gunji, M.
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    Firrincieli, Andrea  
    Proceedings paper
    2012, Symposium on VLSI Technology, 12/06/2012, p.95-96
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    Towards high mobility GeSn channel nMOSFETs: improved surface passivation using novel ozone oxidation method

    Gupta, Somya
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    Vincent, Benjamin  
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    Yang, B.
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    Lin, Dennis  
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    Gencarelli, Federica
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    Lin, J.-Y. J.
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    Chen, R.
    Proceedings paper
    2012, International Electron Devices Meeting - IEDM, 10/12/2012, p.16.2

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