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Browsing by Author "Yao, Thierry"

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    Characterization of moving bits (MBs) and QBD in wet/dry tunnel oxides for floating gate type nonvolatile memory (FG-NVM) applications

    Ackaert, Jan  
    ;
    Lowe, Antony
    ;
    Boonen, Sylvie
    ;
    Yao, Thierry
    ;
    Rayhem, Joseph
    ;
    Desoete, Bart
    Journal article
    2004, Solid-State Electronics, (48) 10_11, p.1911-1915
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    Characterization of tunnel oxides for non-volatile memory (NVM) applications

    Ackaert, Jan  
    ;
    Vermeulen, Tom
    ;
    Lowe, Antony
    ;
    Boonen, Sylvie
    ;
    Yao, Thierry
    ;
    Prasad, Jagdish
    Proceedings paper
    2003, Proceedings International Semiconductor Device Research Symposium, 10/12/2003, p.33-34
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    Failure rate predictions for 0.35μm flash EEPROM memories from accelerated read disturb tests

    Vermeulen, Tom
    ;
    Yao, Thierry
    ;
    Lowe, Antony
    ;
    Cacharelis, Philippe
    ;
    Degraeve, Robin  
    ;
    Van Houdt, Jan  
    Proceedings paper
    2004-09, Proceedings of the 34th European Solid-State Device Research Conference - ESSDERC, 21/09/2004, p.269-272

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