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Characterization of moving bits (MBs) and QBD in wet/dry tunnel oxides for floating gate type nonvolatile memory (FG-NVM) applications
Publication:
Characterization of moving bits (MBs) and QBD in wet/dry tunnel oxides for floating gate type nonvolatile memory (FG-NVM) applications
Date
2004
Journal article
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Ackaert, Jan
;
Lowe, Antony
;
Boonen, Sylvie
;
Yao, Thierry
;
Rayhem, Joseph
;
Desoete, Bart
;
Prasad, Jagdish
;
Thomason, Mike
;
Van Houdt, Jan
;
Degraeve, Robin
;
Haspeslagh, Luc
;
Hendrickx, Paul
Journal
Solid-State Electronics
Abstract
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1972
since deposited on 2021-10-15
435
item.page.metrics.field.last-week
Acq. date: 2025-10-25
Citations
Metrics
Views
1972
since deposited on 2021-10-15
435
item.page.metrics.field.last-week
Acq. date: 2025-10-25
Citations