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Characterization of moving bits (MBs) and QBD in wet/dry tunnel oxides for floating gate type nonvolatile memory (FG-NVM) applications

Date

2004
Journal article
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dc.contributor.authorAckaert, Jan
dc.contributor.authorLowe, Antony
dc.contributor.authorBoonen, Sylvie
dc.contributor.authorYao, Thierry
dc.contributor.authorRayhem, Joseph
dc.contributor.authorDesoete, Bart
dc.contributor.authorPrasad, Jagdish
dc.contributor.authorThomason, Mike
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorDegraeve, Robin
dc.contributor.authorHaspeslagh, Luc
dc.contributor.authorHendrickx, Paul
dc.contributor.imecauthorAckaert, Jan
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorHaspeslagh, Luc
dc.contributor.imecauthorHendrickx, Paul
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.date.accessioned2021-10-15T12:38:40Z
dc.date.available2021-10-15T12:38:40Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8462
dc.source.beginpage1911
dc.source.endpage1915
dc.source.issue10_11
dc.source.journalSolid-State Electronics
dc.source.volume48
dc.title

Characterization of moving bits (MBs) and QBD in wet/dry tunnel oxides for floating gate type nonvolatile memory (FG-NVM) applications

dc.typeJournal article
dspace.entity.typePublication
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