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Browsing by Author "Yoshida, Yukifumi"

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    Enabling GeH4-HCl in-situ pre-epi clean: impact of water quality on HF last process performance

    Wostyn, Kurt  
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    Rondas, Dirk  
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    Loo, Roger  
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    Dhayalan, Sathish Kumar
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    Hikavyy, Andriy  
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    Elskens, Wim  
    Meeting abstract
    2015, E-MRS Fall Symposium: Alternative Semiconductor Integration in Si Microelectronics: Materials, Techniques and Applications, 15/09/2015
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    Impact of hydrogen peroxide in ultrapure water

    Ogawa, Yuichi
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    Masaoka, Toru
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    Gan, Nobuko
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    Fujimura, Yu
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    Minato, Yasuharu
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    Miyazaki, Yoichi
    Proceedings paper
    2017, Surface Preparation and Cleaning Conference - SPCC, 27/03/2017, p.91-101
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    Pre-Epi Clean of SiGe 20%: GeH4 and HCl vs H2-based in-situ cleaning

    Wostyn, Kurt  
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    Dhayalan, Sathish Kumar
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    Gencarelli, Federica
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    Masaoku, Toru
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    Iino, Hideaki
    Meeting abstract
    2018-05, 9th International SiGe Technology and Device Meeting / 11th International Conference on Silicon Epitaxy and Heterostructures, 27/05/2018, p.193-194
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    SiGe vs. Si selective wet etchingfor Si gate-all-around

    Komori, Kana
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    Rip, Jens  
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    Yoshida, Yukifumi
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    Wostyn, Kurt  
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    Sebaai, Farid  
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    Liu, Wen Dar
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    Lee, Yi Chia
    Proceedings paper
    2018, Ultra Clean Processing of Semiconductor Surfaces XIV - UCPSS, 2/09/2018, p.107-112
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    Surface preparation and wet cleaning for germanium surface

    Otsuji, Masayuki
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    Yoshida, Yukifumi
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    Takahashi, Hiroaki
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    Sebaai, Farid  
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    Wostyn, Kurt  
    Proceedings paper
    2017, IEEE Electron Devices Technology and Manufacturing Conference - EDTM, 28/02/2017, p.160-161

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