Browsing by Author "Yoshino, Kenji"

Gate-length dependent radiation damage in 2-MeV electron-irradiated Si1-xGexS/D p-MOSFETs

Increased radiation hardness of short-channel electron-irradiated Si1-xGex source/drain p-type metal oxide semiconductor field-effect transistors at higher Ge content

Local compressive stress generation in electron irradiated boron-doped Si0.75Ge0.25/Si devices

Radiation tolerance of Si1-yCy source/drain n-MOSFETs with different carbon concentrations