Browsing by Author "Zhang, C.X."
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Publication Interface and border traps in Ge pMOSFETs
Meeting abstract2012, ECS Fall Meeting Symposium E6: High Purity Silicon 12, 7/10/2012, p.2637Publication Total ionizing dose effects on Ge channel pFETs with raised Si0.55Ge0.45 source drain
;Wang, L. ;Zhang, E.X. ;Zhang, C.X. ;Duan, G.X. ;Schrimpf, R.D. ;Fleetwood, D.M.Reed, R.A.Proceedings paper2015, IEEE Nuclear & Space Radiation Effects Conference - NSREC, 13/07/2015, p.22-25Publication Total-dose-irradiation and annealing responses of Ge-pMOSFETs
Oral presentation2010, IEEE Nuclear and Space Radiation Effects Conference - NSREC