Browsing by Author "Zhang, Jenny"
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Publication Behavior of hot hole stressed SiO2/Si interface at elevated temperatures
Journal article1998, Journal of Applied Physics, (83) 2, p.843-850Publication Continuing degradation of the SiO2/Si interface after hot hole stress
Journal article1997, Journal of Applied Physics, (81) 6, p.2686-2692Publication Dependence of energy distributions of interface states on stress conditions
; ; Publication Generation and annealing of hot hole induced interface states
Journal article1997, Microelectronic Engineering, 36, p.227-230Publication Generation of hole traps in silicon dioxides
Proceedings paper2001, Proceedings of the 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits - IPFA, p.50-54Publication Hole trapping and trap generation in the gate silicon dioxide
Journal article2001, IEEE Trans. Electron Devices, (48) 6, p.1127-1135Publication Hot hole induced degradation of oxynitrides
Oral presentation1997, SISC-Conference; December 1997; Charleston, South-Carolina, USA.Publication On the hot-hole induced post-stress interface trap generation in MOSFETs
Proceedings paper1996, 1996 International Reliability Physics Proceedings ; April 29 - May 2, 1996. Dallas, Texas, USA., p.305-310Publication On the interface states generated under different stress conditions
; ; Publication On the mechanism of electron trap generation in gate oxides
Journal article2001, Microelectronic Engineering, (59) 1_4, p.89-94Publication Properties of electron traps generated in the gate oxide
Oral presentation2001, SISC-Conference; December 2001; Washington, D.C.Publication Relation between hydrogen and the generation of interface state precursors
Journal article1999, Microelectronic Engineering, (48) 1_4, p.135-138Publication The enhanced degradation of MOSFETs damaged by hot holes
Proceedings paper1996, Proceedings of the Third International Symposium on the Physics and Chemistry of SiO2 and the SiO2 Interface; May 5-10, 1996. Lo, p.711-721