Browsing by Author "Zhang, Yang"
- Results per page
- Sort Options
Publication A 0.13 mu m GaAs HEMT Reconfigurable Balance-to-Doherty Stacked Power Amplifier for 5G mm-wave Applications
Proceedings paper2023, 18th International Conference on Ph.D Research in Microelectronics and Electronics (PRIME), JUN 18-21, 2023, p.1-4Publication A 28 GHz front-end module with T/R switch achieving 17.2 dBm P-sat, 21.5% PAE(max) and 3.2 dB NF in 22 nm FD-SOI for 5G communication
Proceedings paper2020, IEEE Radio Frequency Integrated Circuits Symposium (RFIC), AUG 04-06, 2020, p.347-350Publication A 33 dBm, >30% PAE GaN Power Amplifier Based on a Sub-Quarter-Wavelength Balun for 5G Applications
Proceedings paper2023, IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), OCT 16-18, 2023, p.70-73Publication A 39GHz T/R front-end module achieving 25.6% PAE(max), 20dBm P-sat, 5.7dB NF, and-13dBm IIP3 in 22nm FD-SOI for 5G communications
Proceedings paper2021, IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, JUN 07-09, 2021, p.23-26Publication A 56Gb/s Zero-IF D-Band Transmitter for a Beamformer in 22nm FD-SOI
Proceedings paper2024, IEEE Radio Frequency Integrated Circuits Symposium (RFIC), JUN 16-18, 2024, p.347-350Publication A Compact 0.98 THz Source With On-Chip Antenna In 250-nm InP DHBT
Proceedings paper2023, IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), OCT 16-18, 2023, p.86-89Publication A Compact K-band, Asymmetric Coupler-based, Switchless Transmit- Receive Front-End in 0.15μm GaN-on-SiC Technology
Proceedings paper2023, IEEE 49th European Solid-State Circuits Conference (ESSCIRC), SEP 11-14, 2023, p.457-460Publication A D-band 20.4 dBm OP1dB Transformer-Based Power Amplifier With 23.6% PAE In A 250-nm InP HBT Technology
Proceedings paper2023-07-24, IEEE Radio Frequency Integrated Circuits Symposium (RFIC), JUN 11-13, 2023, p.309-312Publication A D-band Power-Combined Stacked Common-Base Power Amplifier Achieving 20.9 dBm Psat and 24.3 % PAE in a 250-nm InP HBT Technology
Proceedings paper2024, 2024 Bipolar Complemetary Metal-Oxide Semiconductor and Compound Semiconductor Integrated Circuits and Technology Symposium, OCT 27-30, 2024, p.185-188Publication A Differential GaN Power Amplifier with <1° AM-PM Distortion for 5G mm-wave Applications
Proceedings paper2023, 18th European Microwave Integrated Circuits Conference (EuMIC), SEP 18-19, 2023, p.80-83Publication A flexible power model for mm-wave and THz high-throughput communication systems
Proceedings paper2020, 31st Annual IEEE International Symposium on Personal, Indoor and Mobile Radio Communications (IEEE PIMRC), AUG 31-SEP 03, 2020Publication A Low-Power Reflection-Coefficient Sensor for 28-GHz Beamforming Transmitters in 22-nm FD-SOI CMOS
; ; ; ; ; Journal article2021, IEEE JOURNAL OF SOLID-STATE CIRCUITS, (56) 12, p.3704-3714Publication A Reflection-Coefficient Sensor for 28GHz Beamforming Transmitters in 22nm FD-SOI CMOS
Proceedings paper2021, IEEE International Solid-State Circuits Conference (ISSCC), FEB 13-22, 2021, p.360Publication Analysis of the Gate Current's Influence on the RF Power Performance of InAlN/GaN HEMTs
Journal article2025, IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, (73) 2, p.779-788Publication Design and Analysis of a 28 GHz T/R Front-End Module in 22-nm FD-SOI CMOS Technology
; ; ; ; ; ; Journal article2021, IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, (69) 6, p.2841-2853Publication III-V/III-N technologies for next generation high-capacity wireless communication
Proceedings paper2022, International Electron Devices Meeting (IEDM), DEC 03-07, 2022Publication Interfacial Properties of nMOSFETs With Different Al2O3 Capping Layer Thickness and TiN Gate Stacks
Journal article2021, IEEE TRANSACTIONS ON ELECTRON DEVICES, (68) 3, p.948-953Publication Polymer microwave fibers: a new approach that blends wireline, optical, and wireless communication
Journal article2020, IEEE Microwave Magazine, (21) 1, p.51-66Publication Self-assembled multilayers of vertically aligned semiconductor nanorods on device-scale areas
Journal article2011, Advanced Materials, (23) 19, p.2205-2209Publication Temperature-Dependent Electrical Properties of nMOSFETs With Different Thickness Al2O3 Capping Layer and TiN Gate
; ; Claeys, CorJournal article2021, IEEE TRANSACTIONS ON ELECTRON DEVICES, (68) 12, p.6020-6025