Analysis of the Gate Current's Influence on the RF Power Performance of InAlN/GaN HEMTs

Xiao, Dongping; Schreurs, Dominique M. M. -P.; ElKashlan, Rana; Zhang, Yang; Cooman, Adam; Khaled, Ahmad; Smellie, Daanish; Alian, AliReza; Asad, Muhammad; Parvais, Bertrand; Wambacq, Piet; Peralagu, Uthayasankaran; Collaert, Nadine

doi:10.1109/TMTT.2024.3431196

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Analysis of the Gate Current's Influence on the RF Power Performance of InAlN/GaN HEMTs

Date

2025

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https://doi.org/10.1109/TMTT.2024.3431196

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Xiao, Dongping

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Schreurs, Dominique M. M. -P.

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Peralagu, Uthayasankaran

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Collaert, Nadine

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IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES

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227 since deposited on 2024-08-15

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Acq. date: 2026-01-06

Analysis of the Gate Current's Influence on the RF Power Performance of InAlN/GaN HEMTs

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