Publication:

Analysis of the Gate Current's Influence on the RF Power Performance of InAlN/GaN HEMTs

Date

2025
Journal article
https://doi.org/10.1109/TMTT.2024.3431196
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Author(s)

Xiao, Dongping  
;
Schreurs, Dominique M. M. -P.
;
ElKashlan, Rana  
;
Zhang, Yang  
;
Cooman, Adam  
;
Khaled, Ahmad  
;
Smellie, Daanish  
;
Alian, AliReza  
;
Asad, Muhammad  
;
Parvais, Bertrand  
;
Wambacq, Piet  
;
Peralagu, Uthayasankaran  
;
Collaert, Nadine  

Journal

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES

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220 since deposited on 2024-08-15
Acq. date: 2025-10-27

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220 since deposited on 2024-08-15
Acq. date: 2025-10-27

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