Publication:

Analysis of the Gate Current's Influence on the RF Power Performance of InAlN/GaN HEMTs

Date

2025
Journal article
https://doi.org/10.1109/TMTT.2024.3431196
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dc.contributor.authorXiao, Dongping
dc.contributor.authorSchreurs, Dominique M. M. -P.
dc.contributor.authorElKashlan, Rana Y.
dc.contributor.authorZhang, Yang
dc.contributor.authorCooman, Adam
dc.contributor.authorKhaled, Ahmad
dc.contributor.authorSmellie, Daanish
dc.contributor.authorAlian, AliReza
dc.contributor.authorAsad, Muhammad
dc.contributor.authorParvais, Bertrand
dc.contributor.authorWambacq, Piet
dc.contributor.authorPeralagu, Uthayasankaran
dc.contributor.authorCollaert, Nadine
dc.contributor.imecauthorXiao, Dongping
dc.contributor.imecauthorElKashlan, Rana
dc.contributor.imecauthorZhang, Yang
dc.contributor.imecauthorCooman, Adam
dc.contributor.imecauthorKhaled, Ahmad
dc.contributor.imecauthorSmellie, Daanish
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorAsad, Muhammad
dc.contributor.imecauthorParvais, Bertrand
dc.contributor.imecauthorWambacq, Piet
dc.contributor.imecauthorPeralagu, Uthayasankaran
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecXiao, Dongping::0000-0002-7581-870X
dc.contributor.orcidimecElKashlan, Rana::0000-0003-0576-4344
dc.contributor.orcidimecZhang, Yang::0000-0002-1540-2462
dc.contributor.orcidimecCooman, Adam::0000-0002-5206-1062
dc.contributor.orcidimecKhaled, Ahmad::0000-0003-2892-3176
dc.contributor.orcidimecSmellie, Daanish::0000-0002-8490-2436
dc.contributor.orcidimecAlian, AliReza::0000-0003-3463-416X
dc.contributor.orcidimecAsad, Muhammad::0000-0002-5204-932X
dc.contributor.orcidimecParvais, Bertrand::0000-0003-0769-7069
dc.contributor.orcidimecWambacq, Piet::0000-0003-4388-7257
dc.contributor.orcidimecPeralagu, Uthayasankaran::0000-0001-9166-4408
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2025-05-05T11:47:37Z
dc.date.available2024-08-15T18:46:44Z
dc.date.available2025-05-05T11:47:37Z
dc.date.issued2025
dc.description.wosFundingTextThis work was supported by imec Advanced RF imec Industrial Affiliation Program (IIAP).
dc.identifier.doi10.1109/TMTT.2024.3431196
dc.identifier.issn0018-9480
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/44305
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
dc.source.beginpage779
dc.source.endpage788
dc.source.issue2
dc.source.journalIEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
dc.source.numberofpages10
dc.source.volume73
dc.subject.keywordsALGAN/GAN
dc.subject.keywordsRELIABILITY
dc.title

Analysis of the Gate Current's Influence on the RF Power Performance of InAlN/GaN HEMTs

dc.typeJournal article
dspace.entity.typePublication
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