Browsing by Author "de Jaeger, J.C."
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Publication AlN on nanocrystalline diamond piezoelectric cantilevers for sensors/actuators
Journal article2009, Procedia Chemistry, (1) 1, p.40-43Publication Design, fabrication and physical analysis of TiN/AlN deep UV photodiodes
;Barkad, H.A. ;Soltani, A. ;Mattalah, M. ;Gerbedoen, J.C. ;Rousseau, M.de Jaeger, J.C.Journal article2010, Journal of Physics D: Applied Physics, (43) 46, p.465104Publication Evolution de caractéristiques statiques de HEMTs AlGaN/GaN soumis à un stress électrique réalisé à differentes températures
;Boudart, B. ;Llibre, J.F. ;Briand, D. ;Tala-Ighil, B. ;Toutah, H. ;Guhel, Y.de Jaeger, J.C.Oral presentation2003, Journées Nationales Micro-Ondes - JNMPublication First results of AlGaN/GaN HEMTs on sapphire substrate using an argon-ion implant-isolation technology
;Werquin, M. ;Vellas, N. ;Guhel, Y. ;Ducatteau, D. ;Boudart, B. ;Pesant, J.C.Bougrioua, Z.Journal article2005, Microwave and Optical Technology Letters, (46) 4, p.311-315Publication Grain size tuning of nanocrystalline chemical vapor deposited diamond by continuous electrical bias growth: Experimental and theoretical study
Journal article2012, Physica Status Solidi A, (209) 9, p.1675-1682Publication High power and linearity performances of gallium nitride HEMT devices on sapphire substrate
;Werquin, W. ;Gaquiere, C. ;Guhel, Y. ;Vellas, N. ;Theron, D. ;Boudart, B. ;Hoel, V.Germain, MarianneJournal article2005, Electronics Letters, (41) 1, p.46-47Publication High power performances of AlGaN/GaN HEMTs on Sapphire Substrate at Ft=4GHz
;Vellas, N. ;Gaquire, C. ;Guhel, Y. ;Werquin, M. ;Ducatteau, D. ;Boudart, B.de Jaeger, J.C.Proceedings paper2002, Proceedings of the IEEE GaAs 2002 Conference, 23/09/2002, p.25-28Publication Improvement of AlN SAW performance by introduction of TiN nucleation layer on silicon substrate
Oral presentation2010, Hasselt Diamond Workshop - SBDD XVPublication Influence d'une passivation précédée d'un traitement de surface sur le comportement électrique en regime statique d'un HEMT AlGaN/GaN
;Guhel, Y. ;Boudart, B. ;Vellas, N. ;Gaquiere, C. ;Delos, E. ;Ducateau, D.Bougrioua, Z.Oral presentation2003, Journées Nationales Micro-Ondes - JNMPublication Investigations of Lamb acoustic wave devices based on AlN/Diamond thin multilayers
Oral presentation2009, Hasselt Diamond Workshop - SBDD XIVPublication Microwave performances on gallium nitride based HEMT devices
;Gaquiere, C. ;Vellas, N. ;Werquin, M. ;Ducatteau, D. ;Delos, E. ;Chartier, E.Lancereau, D.Oral presentation2004, WS GAAS02 Workshop: Wide Bandgap Research for Microwave Applications: Materials, Device & Circuit IssuesPublication New developments on diamond photodetector for VUV solar observations
;Benmoussa, A. ;Soltani, A.; ;Kroth, U. ;Mortet, V. ;Barkad, H.A. ;Bolsee, D.Hermans, C.Journal article2008, Semiconductor Science and Technology, (23) 3, p.35026Publication Premiers résultats de puissance à 4GHz obtenus sur HEMTs AlGaN/GaN en technologie planar
;Vellas, N. ;Guhel, Y. ;Gaquiere, C. ;Boudart, B. ;Pesant, J.C. ;Bougrioua, Z.Germain, MarianneOral presentation2003, Journées Nationales Micro-OndesPublication Properties of diamond films grown by MWPECVD with DC substrate bias
;Mortet, Vincent ;Zhang, L. ;Eckert, M.; ;Sotani, A. ;Moreau, M. ;Saitner, M.Troadec, D.Meeting abstract2010, Engineering of Functional Interfaces - EnFI, 15/07/2010Publication Recent developments of wide-bandgap semiconductor based UV sensors
;Benmoussa, A. ;Soltani, A. ;Schühle, U.; ;Chong, Y.M. ;Zhang, W.J. ;Dahal, R.Lin, J.Y.Journal article2009, Diamond and Related Materials, (18) 5_8, p.860-864