Browsing by author "Buhler, Rudolf"

Comparison between experimental and simulated strain profiles in Ge channels with embedded source/drain stressors

Buhler, Rudolf; Eneman, Geert; Favia, Paola; Bender, Hugo; Vincent, Benjamin; Hikavyy, Andriy; Loo, Roger; Martino, Joao; Claeys, Cor; Simoen, Eddy; Collaert, Nadine; Thean, Aaron (2014)

Comparison between experimental and simulated strain profiles in Ge channels with embedded source/drain stressors

Buhler, Rudolf; Eneman, Geert; Favia, Paola; Bender, Hugo; Vincent, Benjamin; Hikavyy, Andriy; Loo, Roger; Martino, Joao; Claeys, Cor; Simoen, Eddy; Collaert, Nadine; Thean, Aaron (2014)

Different stress techniques and their efficiency on triple-gate SOI n-MOSFETs

Buhler, Rudolf; Agopian, Paula GD; Collaert, Nadine; Simoen, Eddy; Claeys, Cor; Martino, Joao (2015)

Fin dimension influence on mechanical stressors in triple-gate SOI nMOSFETs

Buhler, Rudolf; Simoen, Eddy; Agopian, Paula; Claeys, Cor; Martino, Joao (2013)

Strain characterization and simulation for MOSFETs with embedded source/drain stressors

Simoen, Eddy; Eneman, Geert; Favia, Paola; Bender, Hugo; Verheyen, Peter; Vincent, Benjamin; Hikavyy, Andriy; Loo, Roger; Claeys, Cor; Buhler, Rudolf; Martino, Joao; Bargallo Gonzalez, Mireia; Thean, Aaron (2014-04)

TCAD strain calibration versus nanobeam diffraction of source/drain stressors for Ge MOSFETs

Buhler, Rudolf; Eneman, Geert; Favia, Paola; Witters, Liesbeth; Vincent, Benjamin; Hikavyy, Andriy; Loo, Roger; Bender, Hugo; Collaert, Nadine; Simoen, Eddy; Martino, Joao; Claeys, Cor (2015)