Browsing by author "Gelpey, J."
Now showing items 1-6 of 6
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A comparison of spike, flash, SPER and laser annealing for 45nm CMOS
Lindsay, Richard; Pawlak, Bartek; Kittl, Jorge; Henson, Kirklen; Torregiani, Cristina; Giangrandi, Simone; Surdeanu, Radu; Vandervorst, Wilfried; Mayur, A.; Ross, J.; McCoy, S.; Gelpey, J.; Elliott, K.; Pagès, Xavier; Satta, Alessandra; Lauwers, Anne; Stolk, P.; Maex, Karen (2003) -
Device characteristics of ultra-shallow junctions formed by fRTP annealing
Satta, Alessandra; Lindsay, Richard; Severi, Simone; Henson, Kirklen; Maex, Karen; McCoy, S.; Gelpey, J.; Elliott, K. (2004) -
Influence of halo implant on leakage current and sheet resistance of ultra-shallow p-n junctions
Faifer, V.N.; Schroder, D.K.; Current, M.I.; Clarysse, Trudo; Timans, P.J.; Zangerle, T.; Vandervorst, Wilfried; Wong, T.M.H.; Moussa, Alain; McCoy, S.; Gelpey, J.; Lerch, W.; Paul, S.; Bolze, D. (2007) -
Integration of low and high temperature junction anneals for 45nm CMOS
Lindsay, Richard; Pawlak, Bartek; Henson, Kirklen; Satta, Alessandra; Severi, Simone; Lauwers, Anne; Surdeanu, Radu; McCoy, S.; Gelpey, J.; Pagès, Xavier; Maex, Karen (2004) -
Integration of ultra shallow junctions in PVD TaN nMOS transistors with flash lamp annealing
Severi, Simone; De Meyer, Kristin; Pawlak, Bartek; Duffy, Ray; Kerner, Christoph; McCoy, S.; Gelpey, J.; Selinger, T.; Ragnarsson, Lars-Ake; Absil, Philippe; Biesemans, Serge (2005-10) -
Leakage current and dopant activation characterization of SDE/halo CMOS junctions with non-contact junction photo-voltage metrology
Faifer, V.N.; Schroder, D.K.; Current, M.I.; Clarysse, Trudo; Timans, P.J.; Zangerle, T.; Vandervorst, Wilfried; Wong, T.M.H.; Moussa, Alain; McCoy, S.; Gelpey, J.; Lerch, W.; Paul, S.; Bolze, D. (2007)