Browsing by author "Ni, Kai"
Now showing items 1-6 of 6
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Carbon Nanotube SRAM in 5-nm Technology Node Design, Optimization, and Performance Evaluation--Part I: CNFET Transistor Optimization
Chen, Rongmei; Chen, Lin; Liang, Jie; Cheng, Yuanqing; Elloumi, Souhir; Lee, Jaehyun; Xu, Kangwei; Georgiev, Vihar P.; Ni, Kai; Debacker, Peter; Asenov, Asen; Todri-Sanial, Aida (2022) -
Carbon Nanotube SRAM in 5-nm Technology Node Design, Optimization, and Performance Evaluation--Part II: CNT Interconnect Optimization
Chen, Rongmei; Chen, Lin; Liang, Jie; Cheng, Yuanqing; Elloumi, Souhir; Lee, Jaehyun; Xu, Kangwei; Georgiev, Vihar P.; Ni, Kai; Debacker, Peter; Asenov, Asen; Todri-Sanial, Aida (2022) -
Device assessment of electrically active defects in high-mobility materials
Claeys, Cor; Simoen, Eddy; Eneman, Geert; Ni, Kai; Hikavyy, Andriy; Loo, Roger; Gupta, Somya; Merckling, Clement; Alian, AliReza; Caymax, Matty (2016) -
Electrical effect of a single extended defect in MOSFETs: a simulation study
Ni, Kai; Eneman, Geert; Simoen, Eddy; Mocuta, Anda; Collaert, Nadine; Thean, Aaron; Schrimpf, Ronald; Reed, Robert; Fleetwood, Daniel (2016) -
On the assessment of electrically active defects in high-mobility materials and devices
Simoen, Eddy; Eneman, Geert; Oliveira, Alberto V.; Ni, Kai; Mitard, Jerome; Witters, Liesbeth; Agopian, Paula G D; Martino, Joao Antonio; Fleetwood, Dan; Schrimpf, Ronald; Reed, Robert; Collaert, Nadine; Thean, Aaron; Claeys, Cor (2016) -
X-Ray and proton radiation effects on 40 nm CMOS physically unclonable function devices
Wang, Pengfei; Zhang, Enxia; Chuang, Kent; Liao, Wenjun; Gong, Huiqi; Wang, Pan; Arutt, Charles N; Ni, Kai; McCurdy, Mike; Verbauwhede, Ingrid; Bury, Erik; Linten, Dimitri; Fleetwood, Daniel; Schrimpf, Ron; Reed, Robert (2018)