Now showing items 1-9 of 9

    • 12-EUV layer Surrounding Gate Transistor (SGT) for vertical 6-T SRAM: 5-nm-class technology for ultra-density logic devices 

      Kim, Min-Soo; Harada, N.; Kikuchi, Yoshiaki; Boemmels, Juergen; Mitard, Jerome; Huynh Bao, Trong; Matagne, Philippe; Tao, Zheng; Li, Waikin; Devriendt, Katia; Ragnarsson, Lars-Ake; Lorant, Christophe; Sebaai, Farid; Porret, Clément; Rosseel, Erik; Dangol, Anish; Batuk, Dmitry; Martinez Alanis, Gerardo Tadeo; Geypen, Jef; Jourdan, Nicolas; Sepulveda Marquez, Alfonso; Puliyalil, Harinarayanan; Jamieson, Geraldine; van der Veen, Marleen; Teugels, Lieve; El-Mekki, Zaid; Altamirano Sanchez, Efrain; Li, Y.; Nakamura, H.; Mocuta, Dan; Matsuoka, F. (2019)
    • Advances in Magnetics Roadmap on Spin-Wave Computing 

      Chumak, A. V.; Kabos, P.; Wu, M.; Abert, C.; Adelmann, Christoph; Adeyeye, A. O.; Akerman, J.; Aliev, F. G.; Anane, A.; Awad, A.; Back, C. H.; Barman, A.; Bauer, G. E. W.; Becherer, M.; Beginin, E. N.; Bittencourt, V. A. S. V.; Blanter, Y. M.; Bortolotti, P.; Boventer, I.; Bozhko, D. A.; Bunyaev, S. A.; Carmiggelt, J. J.; Cheenikundil, R. R.; Ciubotaru, Florin; Cotofana, S.; Csaba, G.; Dobrovolskiy, O. V.; Dubs, C.; Elyasi, M.; Fripp, K. G.; Fulara, H.; Golovchanskiy, I. A.; Gonzalez-Ballestero, C.; Graczyk, P.; Grundler, D.; Gruszecki, P.; Gubbiotti, G.; Guslienko, K.; Haldar, A.; Hamdioui, S.; Hertel, R.; Hillebrands, B.; Hioki, T.; Houshang, A.; Hu, C. -M.; Huebl, H.; Huth, M.; Iacocca, E.; Jungfleisch, M. B.; Kakazei, G. N.; Khitun, A.; Khymyn, R.; Kikkawa, T.; Klaui, M.; Klein, O.; Klos, J. W.; Knauer, S.; Koraltan, S.; Kostylev, M.; Krawczyk, M.; Krivorotov, I. N.; Kruglyak, V. V.; Lachance-Quirion, D.; Ladak, S.; Lebrun, R.; Li, Y.; Lindner, M.; Macedo, R.; Mayr, S.; Melkov, G. A.; Mieszczak, S.; Nakamura, Y.; Nembach, H. T.; Nikitin, A. A.; Nikitov, S. A.; Novosad, V.; Otalora, J. A.; Otani, Y.; Papp, A.; Pigeau, B.; Pirro, P.; Porod, W.; Porrati, F.; Qin, H.; Rana, B.; Reimann, T.; Riente, F.; Romero-Isart, O.; Ross, A.; Sadovnikov, A. V.; Safin, A. R.; Saitoh, E.; Schmidt, G.; Schultheiss, H.; Schultheiss, K.; Serga, A. A.; Sharma, S.; Shaw, J. M.; Suess, D.; Surzhenko, O.; Szulc, K.; Taniguchi, T.; Urbanek, M.; Usami, K.; Ustinov, A. B.; van der Sar, T.; van Dijken, S.; Vasyuchka, V. I.; Verba, R.; Kusminskiy, S. Viola; Wang, Q.; Weides, M.; Weiler, M.; Wintz, S.; Wolski, S. P.; Zhang, X. (2022)
    • An investigation of field reduction effect on NBTI parameter characterization and lifetime prediction using a constant field stress method 

      Zhou, L.; Bo, T.; Ji, Z.; Yang, H.; Xu, H.; Liu, Q.; Simoen, Eddy; Wang, X.; Ma, X.; Li, Y.; Yin, H.; Du, A.; Zhao, C.; Wang, W. (2020)
    • CMP process development for high mobility channel materials 

      Ong, Patrick; Gillot, C.; Ansar, S.; Noller, B.; Li, Y. (2012)
    • Insights into the effect of TiN thickness scaling on DC and AC NBTI characteristics in replacement metal gate pMOSFETs 

      Zhou, L.; Liu, Q.; Yang, H.; Ji, Z.; Xu, H.; Tang, B.; Simoen, Eddy; Jiang, H.; Luo, Y.; Wang, X.; Ma, X.; Li, Y.; Luo, J.; Yin, H.; Zhao, C.; Wang, W. (2020)
    • Interconnects for scaled SRAM with vertical Surrounded Gate Transistors (SGT) 

      Boemmels, Juergen; Harada, N.; Kim, Min-Soo; Mitard, Jerome; Kikuchi, Yoshiaki; Li, Waikin; Tao, Zheng; Puliyalil, Harinarayanan; Devriendt, Katia; Lorant, Christophe; Le, Quoc Toan; Kesters, Els; Jourdan, Nicolas; El-Mekki, Zaid; Teugels, Lieve; van der Veen, Marleen; Li, Y.; Nakamura, H.; Mocuta, Dan; Masuoka, F. (2019)
    • LPCVD polysilicon-based passivating contacts for plated bifacial n-type PERT solar cells 

      Recaman Payo, Maria; Russell, Richard; Singh, Sukhvinder; Depauw, Valerie; Kuzma Filipek, Izabela; Li, Y.; Firat, Meric; Tous, Loic; John, Joachim; Duerinckx, Filip; Szlufcik, Jozef; Poortmans, Jef; Luchies, J.R.M.; Lenes, M. (2018)
    • Reflectionless grating coupling for silicon-on-insulator integrated circuits 

      Vermeulen, Diedrik; De Koninck, Yannick; Li, Y.; Lambert, Emmanuel; Bogaerts, Wim; Baets, Roel; Roelkens, Gunther (2011)
    • Understanding frequency dependence of trap generation under AC negative bias temperature instability stress in Si p-FinFETs 

      Zhou, L.; Zhang, Q.; Yang, H.; Ji, Z.; Zhang, Z.; Liu, Q.; Xu, H.; Tang, B.; Simoen, Eddy; Ma, X.; Wang, X.; Li, Y.; Yin, H.; Luo, J.; Zhao, C.; Wang, W. (2020)