Browsing by author "Lundgren, P."
Now showing items 1-6 of 6
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Behaviour of Poly-Si1-XGex-gated MOS capacitors under different electrical stress conditions in the direct tunnelling regime
Yousif, M. Y. A.; Willander, M.; Lundgren, P.; Caymax, Matty (2001) -
Cryogenic performance of ultrathin oxide CMOS capacitors with in situ doped p+ poly-Si1-xGex and poly Si gate materials
Jacob, A.P.; Myrberg, T.; Nur, O.; Lundgren, P.; Sveinbjornsson, E.O.; Ye, L.L.; Tholen, A.; Caymax, Matty (2002) -
Electrical stress characteristics of MOS capacitors with p-type poly-SiGe and poly-Si gates in the direct tunneling regime
Yousif, M. Y. A.; Willander, M.; Lundgren, P.; Caymax, Matty (2000) -
Low temperature electrical performance of ultrathin oxide MOS capacitors with p+ poly-Si1-xGex and poly-Si gate materials
Jacob, A. P.; Myrberg, T.; Yousif, M. Y. A.; Nur, O.; Willander, M.; Lundgren, P.; Sveinbjörnson, E. Ö.; Caymax, Matty (2002) -
On the performance of in situ B-doped P+ poly-Si1-xGex gate material for nanometer scale MOS
Yousif, M. Y. A.; Friesel, M.; Willander, M.; Lundgren, P.; Caymax, Matty (2000) -
p+poly-Si1-xGex gate material for future high-speed nanoscale CMOS circuits
Yousif, M. Y. A.; Willander, M.; Lundgren, P.; Caymax, Matty (2000)