Browsing by author "Leadley, D.R."
Now showing items 1-5 of 5
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Defect-related excess low-frequency noise in Ge-on-Si pMOSFETs
Simoen, Eddy; Mitard, Jerome; De Jaeger, Brice; Eneman, Geert; Dobbie, A.; Myronov, M.; Leadley, D.R.; Meuris, Marc; Hoffmann, Thomas Y.; Claeys, Cor (2011) -
Low-frequency noise in strained and relaxed Ge pMOSFETs
Simoen, Eddy; Mitard, Jerome; De Jaeger, Brice; Eneman, Geert; Dobbie, A.; Myronov, M.; Leadley, D.R.; Meuris, Marc; Hoffmann, Thomas Y.; Claeys, Cor (2010) -
TEM analysis of Ge-on-Si MOSFET structures with HfO2 dielectric for high performance PMOS device technology
Norris, D.J.; Walther, T.; Cullis, A.G.; Myronov, M.; Dobbie, A.; Whall, T.; Parker, E.H.C.; Leadley, D.R.; De Jaeger, Brice; Lee, Willie; Meuris, Marc; Watling, J.; Asenov, A. (2010) -
TEM analysis of Si-passivated Ge-on-Si MOSFET structures for high performance PMOS device technology
Norris, D.J.; Ross, I.M.; Cullis, A.G.; Walther, T.; Myronov, M.; Dobbie, A.; Whall, T.; Parker, E.H.C.; Leadley, D.R.; De Jaeger, Brice; Lee, Willie; Meuris, Marc (2010) -
The role of interface states in the low temperature mobility of hafnium-oxide gated Ge-pMOSFETs and the effect of a hydrogen anneal
Beer, C.S.; Whall, T.E.; Parker, E.H.C.; Leadley, D.R.; De Jaeger, Brice; Nicholas, Gareth; Zimmerman, Paul; Meuris, Marc (2008)