Browsing by author "Parker, E.H.C."

Strained Si/SiGe MOS technology

Olsen, S.; Yan, L.; Agaiby, R.; Escobedo-Cousin, E.; O'Neill, A.G.; Hellstrom, P.-E.; Ostling, M.; Lyutovich, L.; Kasper, E.; Claeys, Cor; Parker, E.H.C. (2007)

Strained Si/SiGe MOS technology: improving gate dielectric integrity

Olsen, S.H.; Yan, L.; Agaiby, R.; Escobedo-Cousin, A.G.; O'Neil, A.G.; Hellstrom, P.E.; Ostling, M.; Lyutovich, K.; Kasper, E.; Claeys, Cor; Parker, E.H.C. (2009)

Strained silicon SiGe HFETs for microwave applications

König, U.; Herzog, H.-J.; Aniel, F.; Kasper, E.; De Meyer, Kristin; Rabe, W.J.; Schumacher, H.; Thayne, I.; Parker, E.H.C. (2003)

TEM analysis of Ge-on-Si MOSFET structures with HfO2 dielectric for high performance PMOS device technology

Norris, D.J.; Walther, T.; Cullis, A.G.; Myronov, M.; Dobbie, A.; Whall, T.; Parker, E.H.C.; Leadley, D.R.; De Jaeger, Brice; Lee, Willie; Meuris, Marc; Watling, J.; Asenov, A. (2010)

TEM analysis of Si-passivated Ge-on-Si MOSFET structures for high performance PMOS device technology

Norris, D.J.; Ross, I.M.; Cullis, A.G.; Walther, T.; Myronov, M.; Dobbie, A.; Whall, T.; Parker, E.H.C.; Leadley, D.R.; De Jaeger, Brice; Lee, Willie; Meuris, Marc (2010)

The role of interface states in the low temperature mobility of hafnium-oxide gated Ge-pMOSFETs and the effect of a hydrogen anneal

Beer, C.S.; Whall, T.E.; Parker, E.H.C.; Leadley, D.R.; De Jaeger, Brice; Nicholas, Gareth; Zimmerman, Paul; Meuris, Marc (2008)