Browsing by author "Visalli, Domenica"
Now showing items 1-20 of 30
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2kV breakdown voltage GaN-on-Si DHFETs with sub-micron thick AlGaN Buffer
Srivastava, Puneet; Cheng, Kai; Das, Jo; Van Hove, Marleen; Leys, Maarten; Marcon, Denis; Visalli, Domenica; Geens, Karen; Decoutere, Stefaan; Mertens, Robert; Borghs, Gustaaf (2012) -
A 96% efficient high-frequency DC–DC converter using E-mode GaN DHFETs on Si
Das, Jo; Everts, Jordi; Van den Keybus, Jeroen; Van Hove, Marleen; Visalli, Domenica; Srivastava, Puneet; Marcon, Denis; Cheng, Kai; Leys, Maarten; Decoutere, Stefaan; Driesen, Johan; Borghs, Gustaaf (2011) -
A deep-level analysis of Ni-Au/AlN(111) p-Si metal-insulator-semiconductor capacitors
Simoen, Eddy; Visalli, Domenica; Van Hove, Marleen; Leys, Maarten; Borghs, Gustaaf (2011) -
AlGaN/GaN/AlGaN double heterostructure FETs for power electronics applications
Srivastava, Puneet; Das, Jo; Visalli, Domenica; Van Hove, Marleen; Derluyn, Joff; Malinowski, Pawel; Kang, Xuanwu; Cheng, Kai; Degroote, Stefan; Leys, Maarten; Borghs, Gustaaf; Mertens, Robert; Germain, Marianne (2010) -
AlGaN/GaN/AlGaN double heterostructures on 4 inch Si substrates for high breakdown voltage field-effect transistors with low on-resistance
Visalli, Domenica; Derluyn, Joff; Degroote, Stefan; Leys, Maarten; Cheng, Kai; Germain, Marianne; Van Hove, Marleen; Borghs, Gustaaf (2008) -
AlGaN/GaN/AlGaN double heterostructures on silicon substrates for high breakdown voltage field-effect transistors with low on-resistance
Visalli, Domenica; Van Hove, Marleen; Derluyn, Joff; Degroote, Stefan; Leys, Maarten; Cheng, Kai; Germain, Marianne; Borghs, Gustaaf (2009) -
Depth-resolved cathodoluminescence spectroscopy for characterization of advanced GaN-on-Si buffers
Priesol, Juraj; Satka, Alexander; Visalli, Domenica; Derluyn, Joff; Zhao, Ming; Stoffels, Steve (2017) -
Depth-resolved cathodoluminescence spectroscopy for characterization of advanced GaN-on-Si buffers
Priesol, Juraj; Satka, Alexander; Visalli, Domenica; Zhao, Ming; Stoffels, Steve (2017) -
Electrically active defects at the AlN/Si(111) interface studied by DLTS and ESR
Simoen, Eddy; Visalli, Domenica; Van Hove, Marleen; Leys, Maarten; Favia, Paola; Bender, Hugo; Borghs, Gustaaf; Nguyen, A.P.D.; Stesmans, Andre (2012) -
Excellent stability of GaN-on-Si HEMTs with 5 μm gate-drain spacing tested in off-state at a record drain voltage of 200V and 200°C
Marcon, Denis; Van Hove, Marleen; Visalli, Domenica; Derluyn, Joff; Das, Jo; Medjdoub, Farid; Degroote, Stefan; Leys, Maarten; Cheng, Kai; Mertens, Robert; Germain, Marianne; Borghs, Gustaaf (2009) -
Excellent stability of GaN-on-Si high electron mobility transistors with 5 μm gate/drain spacing tested in off-state at a record drain voltage of 200 V and 200 °C
Marcon, Denis; Van Hove, Marleen; Visalli, Domenica; Derluyn, Joff; Das, Jo; Medjdoub, Farid; Degroote, Stefan; Leys, Maarten; Cheng, Kai; Mertens, Robert; Germain, Marianne; Borghs, Gustaaf (2010) -
Experimental and simulation study of breakdown voltage enhancement of AlGaN/GaN HFETs by Si substrate removal
Visalli, Domenica; Van Hove, Marleen; Srivastava, Puneet; Derluyn, Joff; Das, Jo; Leys, Maarten; Degroote, Stefan; Cheng, Kai; Germain, Marianne; Borghs, Gustaaf (2010) -
GaN-on-Si for high-voltage applications
Visalli, Domenica; Van Hove, Marleen; Srivastava, Puneet; Marcon, Denis; Geens, Karen; Kang, Xuanwu; Vandenplas, Erwin; Viaene, John; Leys, Maarten; Cheng, Kai; Sijmus, Bram; Decoutere, Stefaan; Borghs, Gustaaf (2011) -
GaN-on-Si for high-voltage applications
Visalli, Domenica; Van Hove, Marleen; Srivastava, Puneet; Marcon, Denis; Geens, Karen; Kang, Xuanwu; Vandenplas, Erwin; Viaene, John; Leys, Maarten; Cheng, Kai; Sijmus, Bram; Decoutere, Stefaan; Borghs, Gustaaf (2011) -
GaN-on-Si for power conversion
Germain, Marianne; Derluyn, Joff; Van Hove, Marleen; Medjdoub, Farid; Das, Jo; Marcon, Denis; Degroote, Stefan; Cheng, Kai; Leys, Maarten; Visalli, Domenica; Srivastava, Puneet; Geens, Karen; Viaene, John; Sijmus, Bram; Decoutere, Stefaan; Borghs, Gustaaf (2010) -
GaN-on-Si power field effect transistors
Germain, Marianne; Derluyn, Joff; Van Hove, Marleen; Medjdoub, Farid; Das, Jo; Cheng, Kai; Degroote, Stefan; Leys, Maarten; Visalli, Domenica; Marcon, Denis; Geens, Karen; Viaene, John; Sijmus, Bram; Decoutere, Stefaan; Cartuyvels, Rudi; Borghs, Gustaaf (2010) -
High breakdown voltage in AlGaN/GaN/AlGaN double heterostructures grown on 4 inch Si substrates
Visalli, Domenica; Van Hove, Marleen; Derluyn, Joff; Cheng, Kai; Degroote, Stefan; Leys, Maarten; Germain, Marianne; Borghs, Gustaaf (2009) -
High temperature on- and off-state stress of GaN-on- Si HEMTs with in-situ Si3N4 cap layer
Marcon, Denis; Medjdoub, Farid; Visalli, Domenica; Van Hove, Marleen; Derluyn, Joff; Das, Jo; Degroote, Stefan; Leys, Maarten; Cheng, Kai; Decoutere, Stefaan; Mertens, Robert; Germain, Marianne; Borghs, Gustaaf (2010) -
Investigation of light-induced deep-level defect activation at the AlN/Si interface
Visalli, Domenica; Van Hove, Marleen; Leys, Maarten; Derluyn, Joff; Simoen, Eddy; Srivastava, Puneet; Geens, Karen; Degroote, Stefan; Germain, Marianne; Nguyen, Anh Phuc Duc; Stesmans, Andre; Borghs, Gustaaf (2011) -
Limitations of field plate effect due to the silicon substrate in AlGaN/GaN/AlGaN DHFETs
Visalli, Domenica; Van Hove, Marleen; Derluyn, Joff; Srivastava, Puneet; Marcon, Denis; Das, Jo; Leys, Maarten; Degroote, Stefan; Cheng, Kai; Vandenplas, Erwin; Germain, Marianne; Borghs, Gustaaf (2010)