Browsing by author "Karner, Markus"
Now showing items 1-7 of 7
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3D TCAD model for poly-Si channel current and variability in vertical NAND flash memory
Verreck, Devin; Arreghini, Antonio; Schanovsky, Franz; Stanojevic, Zlatan; Steiner, K.; Mitterbauer, F.; Karner, Markus; Van den Bosch, Geert; Furnemont, Arnaud (2019) -
A model for switching traps in amorphous oxides
Goes, Wolfgang; Grasser, Tibor; Karner, Markus; Kaczer, Ben (2009) -
A Physical TCAD Mobility Model of Amorphous In-Ga-Zn-O (a-IGZO) Devices with Spatially Varying Mobility Edges, Band-Tails, and Enhanced Low-Temperature Convergence
Thesberg, Mischa; Schanovsky, Franz; Zhao, Ying; Karner, Markus; Gonzalez-Medina, Jose Maria; Stanojevic, Zlatan; Vaisman Chasin, Adrian; Rzepa, Gerhard (2024) -
Modeling the Operation of Charge Trap Flash Memory-Part II: Understanding the ISPP Curve With a Semianalytical Model
Verreck, Devin; Schanovsky, Franz; Arreghini, Antonio; Van den Bosch, Geert; Stanojevic, Zlatan; Karner, Markus; Rosmeulen, Maarten (2024) -
On the Modeling of Polycrystalline Ferroelectric Thin Films: Landau-Based Models Versus Monte Carlo-Based Models Versus Experiment
Thesberg, Mischa; Roussel; Stanojevic, Zlatan; Baumgartner, Oskar; Schanovsky, Franz; Karner, Markus; Kosina, Hans; Alam, Md Nur Kutubul; Truijen, Brecht; Kaczer, Ben (2022-06) -
Quantitative 3-D model to explain large single trap charge variability in vertical NAND memory
Verreck, Devin; Arreghini, Antonio; Bastos, Joao; Schanovsky, Franz; Mitterbauer, Ferdinand; Kernstock, C.; Karner, Markus; Degraeve, Robin; Van den Bosch, Geert; Furnemont, Arnaud (2019) -
Statistical Poly-Si grain boundary model with discrete charging defects and its 2D and 3D implementation for vertical 3D NAND channels
Degraeve, Robin; Clima, Sergiu; Putcha, Vamsi; Kaczer, Ben; Roussel, Philippe; Linten, Dimitri; Groeseneken, Guido; Arreghini, Antonio; Karner, Markus; Kernstock, Christian; Stanojevic, Zlatan; Van den Bosch, Geert; Van Houdt, Jan; Furnemont, Arnaud; Thean, Aaron (2015)