Authors

Degraeve, Robin; Clima, Sergiu; Putcha, Vamsi; Kaczer, Ben; Roussel, Philippe; Linten, Dimitri; Groeseneken, Guido; Arreghini, Antonio; Karner, Markus; Kernstock, Christian; Stanojevic, Zlatan; Van den Bosch, Geert; Van Houdt, Jan; Furnemont, Arnaud; Thean, Aaron

Conference

International Electron Devices Meeting - IEDM

Title

Statistical Poly-Si grain boundary model with discrete charging defects and its 2D and 3D implementation for vertical 3D NAND channels

Publication type

Proceedings paper

Embargo date

9999-12-31