Publication:

Statistical Poly-Si grain boundary model with discrete charging defects and its 2D and 3D implementation for vertical 3D NAND channels

Date

2015
Proceedings Paper
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dc.contributor.authorDegraeve, Robin
dc.contributor.authorClima, Sergiu
dc.contributor.authorPutcha, Vamsi
dc.contributor.authorKaczer, Ben
dc.contributor.authorRoussel, Philippe
dc.contributor.authorLinten, Dimitri
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorArreghini, Antonio
dc.contributor.authorKarner, Markus
dc.contributor.authorKernstock, Christian
dc.contributor.authorStanojevic, Zlatan
dc.contributor.authorVan den Bosch, Geert
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorFurnemont, Arnaud
dc.contributor.authorThean, Aaron
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorClima, Sergiu
dc.contributor.imecauthorPutcha, Vamsi
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorArreghini, Antonio
dc.contributor.imecauthorVan den Bosch, Geert
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.imecauthorFurnemont, Arnaud
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecClima, Sergiu::0000-0002-4044-9975
dc.contributor.orcidimecPutcha, Vamsi::0000-0003-1907-5486
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.contributor.orcidimecArreghini, Antonio::0000-0002-7493-9681
dc.contributor.orcidimecVan den Bosch, Geert::0000-0001-9971-6954
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.contributor.orcidimecFurnemont, Arnaud::0000-0002-6378-1030
dc.date.accessioned2021-10-22T18:55:23Z
dc.date.available2021-10-22T18:55:23Z
dc.date.embargo9999-12-31
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25170
dc.source.beginpage121
dc.source.conferenceInternational Electron Devices Meeting - IEDM
dc.source.conferencedate7/12/2015
dc.source.conferencelocationWashington, D.C. USA
dc.source.endpage124
dc.title

Statistical Poly-Si grain boundary model with discrete charging defects and its 2D and 3D implementation for vertical 3D NAND channels

dc.typeProceedings paper
dspace.entity.typePublication
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