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Statistical Poly-Si grain boundary model with discrete charging defects and its 2D and 3D implementation for vertical 3D NAND channels
Publication:
Statistical Poly-Si grain boundary model with discrete charging defects and its 2D and 3D implementation for vertical 3D NAND channels
Date
2015
Proceedings Paper
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32023.pdf
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Degraeve, Robin
;
Clima, Sergiu
;
Putcha, Vamsi
;
Kaczer, Ben
;
Roussel, Philippe
;
Linten, Dimitri
;
Groeseneken, Guido
;
Arreghini, Antonio
;
Karner, Markus
;
Kernstock, Christian
;
Stanojevic, Zlatan
;
Van den Bosch, Geert
;
Van Houdt, Jan
;
Furnemont, Arnaud
;
Thean, Aaron
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Metrics
Views
1885
since deposited on 2021-10-22
410
item.page.metrics.field.last-week
Acq. date: 2025-10-25
Citations