Browsing by author "Rio, David"
Now showing items 1-5 of 5
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28nm-pitch Ru interconnects patterned with 0.33NA-EUV single exposure
Das, Sayantan; Kisson, Nicola; Mahmud Ul Hasan, Hasan MD; Rynders, Luc; Kljucar, Luka; Halder, Sandip; Leray, Philippe; Dusa, Mircea; Rio, David; Mohsen, Mahmoud; Spence, Chris; De Poortere, Etienne (2021) -
Extend 0.33 NA extreme ultraviolet single patterning to pitch 28-nm metal design by low-n mask
Xu, Dongbo; Gillijns, Werner; Tan, Ling Ee; Rio, David; Delorme, Max; Philipsen, Vicky; Kim, Ryan Ryoung han (2022-11-25) -
Logic via printability enhancement using restricted via placement and exhaustive SRAF placement on a staggered grid
Woltgens, Pieter; Colina, Alberto; Rio, David; Delorme, Max; Kovalevich, Tatiana; Thiam, Arame; Van Roey, Frieda; Zografos, Odysseas (2022-05-26) -
Metal layer single EUV expose at pitch 28nm: how bright field and NTD resist advantages align
Franke, Joern-Holger; Frommhold, Andreas; Davydova, Natalia; Aubert, Remko; Nair, Vineet Vijayakrishnan; Kovalevich, Tatiana; Rio, David; Bekaert, Joost; Wang, Erik; Rispens, Gijsbert; Maslow, Mark; Hendrickx, Eric (2021) -
Validation of imaging benefits of Dual Monopole exposures
Brunner, Timothy A.; Franke, Joern-Holger; Truffert, Vincent; De Bisschop, Peter; Rispens, Gijsbert; Duriau, Edouard; van Dijk, Andre; Tabery, Cyrus; Rio, David; de Poortere, Etienne; van de Kerkhof, Mark; Hendrickx, Eric (2023)