Browsing by author "Pey, K.L."
Now showing items 1-7 of 7
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A comprehensive model for breakdown mechanism in HfO2 high-k gate stacks
Ranjan, R.; Pey, K.L.; Tung, C.H.; Tang, L.J.; Groeseneken, Guido; Bera, L.K.; De Gendt, Stefan (2004) -
A new breakdown failure mechanism in HfO2 gate dielectrics
Ranjan, R.; Pey, K.L.; Tang, L.J.; Tung, C.H.; Groeseneken, Guido; Radhakrishnan, M.K.; Kaczer, Ben; Degraeve, Robin; De Gendt, Stefan (2004) -
Breakdown induced thermo-chemical reactions in HfO2 high-k/poly-silicon gate stacks
Ranjan, R.; Pey, K.L.; Tung, C.H.; Tang, L.J.; Ang, D.S.; Groeseneken, Guido; De Gendt, Stefan; Bera, L.K. (2005) -
Direct visualization and in-depth physical study of metal filament formation in percolated high-k dielectrics
Li, X.; Pey, K.L.; Bosman, M.; Liu, W.H.; Kauerauf, Thomas (2010) -
HfO2/spacer-interface breakdown in HfO2 high-k/poly-silicon gate stacks
Ranjan, R; Pey, K.L.; Tung, C.H.; Tang, L.J.; Elattari, Brahim; Kauerauf, Thomas; Groeseneken, Guido; Degraeve, Robin; Ang, D.S.; Bera, L.K. (2005-06) -
New understanding of dielectric breakdown in advanced FinFET devices – physical, electrical, statistical and multiphysics study
Mei, S; Bosman, M.; Raghavan, N.; Linten, Dimitri; Groeseneken, Guido; Horiguchi, Naoto; Pey, K.L. (2016) -
Threshold shift observed in resistive switching in metal-oxide-semiconductor transistors and the effect of forming gas anneal
Liu, W.H.; Pey, K.L.; Wu, X.; Raghavan, N.; Padovani, A.; Larcher, L.; Vandelli, L.; Bosman, M.; Kauerauf, Thomas (2011)