Browsing by author "Wilk, G.D."
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Gate oxide atomic layer deposition studied by in situ infrared spectroscopy
Frank, M.M.; Dörmann, S.; Chabal, Y.J.; Sayan, S.; Garfunkel, E.; Wilk, G.D.; Green, M.L.; Delabie, Annelies; Brijs, Bert (2003) -
Initial growth kinetics of ALD Al2O3 and HfO2 and post-annealing effects
Wilk, G.D.; Frank, M.; Ho, M.Y.; Green, Martin; Chabal, Y.J.; Raisanen, P.; Brijs, Bert; Sorsch, T.W. (2002) -
Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si-O-H) and thermal oxide (SiO2 or Si-O-N)
Green, Martin; Ho, M.Y.; Busch, B.; Wilk, G.D.; Sorsch, T.; Conard, Thierry; Brijs, Bert; Vandervorst, Wilfried; Räisänen, P.I.; Muller, D.; Bude, M.; Grazul, J. (2002)