Browsing by author "Decoutere, Stefaan"
Now showing items 101-120 of 433
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Coupled electro-thermal model for simulation of GaN power switching HEMTs in circuit simulators
Stoffels, Steve; Oprins, Herman; Marcon, Denis; Geens, Karen; Kang, Xuanwu; Van Hove, Marleen; Decoutere, Stefaan (2012) -
Current transient spectroscopy for trapping analysis on Au-free AlGaN/GaN Schottky barrier diode
Hu, Jie; Stoffels, Steve; Lenci, Silvia; Bakeroot, Benoit; Venegas, Rafael; Groeseneken, Guido; Decoutere, Stefaan (2015) -
DC and RF characteristics of a 60-nm FinFET over a wide temperature range
Tinoco, Julio; Parvais, Bertrand; Mercha, Abdelkarim; Decoutere, Stefaan; Raskin, Jean-Pierre (2008) -
Deep submicron CMOS for millimeter wave power applications
Ferndahl, Mattias; Nemati, Hossein; Parvais, Bertrand; Zirath, Herbert; Decoutere, Stefaan (2008) -
Defect Characterization in High-Electron-Mobility Transistors with Regrown p-GaN Gate by Low-Frequency Noise and Deep-Level Transient Spectroscopy
Hsu, Po-Chun; Simoen, Eddy; Liang, Hu; De Jaeger, Brice; Bakeroot, Benoit; Wellekens, Dirk; Decoutere, Stefaan (2021) -
Defect-free isolation on high-thermal-conductivity SOI substrates for complementary BiCMOS technology
Van Wichelen, Koen; Ong, Patrick; Moussa, Alain; Radisic, Dunja; Devriendt, Katia; Halder, Sandip; Kenis, Karine; Lee, Willie; Vandevelde, Bart; Soonekindt, Christophe; Shahar, Abdul Hadi; Smet, Tom; Van Huylenbroeck, Stefaan; Decoutere, Stefaan; Seacrist, Mike; Ries, Mike; Drobny, Vladimir; Wise, Rick (2009) -
Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry
Meneghini, Matteo; Rossetto, Isabella; Borga, Matteo; Canato, Eleonora; De Santi, Carlo; Rampazzo, Fabiana; Meneghesso, Gaudenzio; Zanoni, Enrico; Stoffels, Steve; Van Hove, Marleen; Posthuma, Niels; Decoutere, Stefaan (2017) -
Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors
Mukherjee, Kalparupa; De Santi, Carlo; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo; You, Shuzhen; Geens, Karen; Borga, Matteo; Bakeroot, Benoit; Decoutere, Stefaan (2020) -
Demonstration of GaN integrated half-bridge with on-chip drivers on 200-mm engineered substrates
Li, Xiangdong; Geens, Karen; Zhao, Ming; You, Shuzhen; Wischmeyer, Frank; Odnoblyudov, Vladimir; Groeseneken, Guido; Decoutere, Stefaan (2019) -
Demonstration of High-quality GaN Epitaxy on 200 mm Engineered Substrates for Vertical Power Device Fabrication
Geens, Karen; Herwig, Hahn; Liang, Hu; Borga, Matteo; Cingu, Deepthi; You, Shuzhen; Marx, Matthias; Oligschlaeger, Robert; Fahle, Dirk; Heuken, Michael; Odnoblyudov, Vladimir; Aktas, Ozgur; Basceri, Cem; Decoutere, Stefaan (2021) -
Design-driven optimisation of a 90 nm RF CMOS process by use of elevated source/drain
Linten, Dimitri; Thijs, Steven; Jeamsaksiri, Wutthinan; Mahadeva Iyer, Natarajan; De Heyn, Vincent; Vassilev, Vesselin; Groeseneken, Guido; Scholten, A.J.; Badenes, G.; Jurczak, Gosia; Decoutere, Stefaan; Donnay, Stephane; Wambacq, Piet (2003-09) -
Determination and validation of new nonlinear FinFET model based on lookup ables
Crupi, Giovanni; Schreurs, Dominique; Xiao, Dongping; Caddemi, Alina; Parvais, Bertrand; Mercha, Abdelkarim; Decoutere, Stefaan (2007) -
Determination of the self-compensation ratio of carbon in AlGaN for HEMTs
Rackauskas, Ben; Uren, Michael; Stoffels, Steve; Zhao, Ming; Decoutere, Stefaan; Kuball, Martin (2018) -
Development and analysis of thick GaN drift layers on 200 mm CTE-matched substrate for vertical device processing
Filho Goncalez, Walter; Borga, Matteo; Geens, Karen; Cingu, Deepthi; Chatterjee, Urmimala; Banerjee, Sourish; Vohra, Anurag; Han, Han; Minj, Albert; Hahn, Herwig; Marx, Matthias; Fahle, Dirk; Bakeroot, Benoit; Decoutere, Stefaan (2023) -
Development of a GaN epi-stack on 200mm Si (111) for semi-vertical power devices
Liang, Hu; Stoffels, Steve; Geens, Karen; Decoutere, Stefaan (2017) -
Development of AlGaN recess etch for Emode POWER HEMTs
Mannaert, Geert; Paraschiv, Vasile; De Jaeger, Brice; Van Hove, Marleen; Demand, Marc; Decoutere, Stefaan; Boullart, Werner (2012) -
Development, optimization and evaluation of a CF4 pre-treatment process to remove unwanted interfacial layers in stacks of CVD and PECVD polycrystalline silicon-germanium for MEMS applications
Bryce, George; Severi, Simone; Van Hoof, Rita; Guo, Bin; Kunnen, Eddy; Witvrouw, Ann; Decoutere, Stefaan (2010) -
Development, optimization and evaluation of a CF4 pretreatment process to remove unwanted interfacial layers in stacks of CVD and PECVD polycrystalline silicon-germanium for MEMS applications
Bryce, George; Severi, Simone; Van Hoof, Rita; Guo, Bin; Kunnen, Eddy; Witvrouw, Ann; Decoutere, Stefaan (2010) -
Device and circuit-level analog performance trade-offs: a comparative study of planar bulk FETs versus FinFETs
Subramanian, Vaidy; Parvais, Bertrand; Borremans, Jonathan; Mercha, Abdelkarim; Linten, Dimitri; Wambacq, Piet; Loo, Josine; Dehan, Morin; Collaert, Nadine; Kubicek, Stefan; Lander, Rob; Hooker, Jacob; Cubaynes, Florence; Donnay, Stephane; Jurczak, Gosia; Groeseneken, Guido; Sansen, Willy; Decoutere, Stefaan (2005) -
Device breakdown optimization of Al2O3/GaN E-mode MISFETs
Kang, Xuanwu; Wellekens, Dirk; Van Hove, Marleen; De Jaeger, Brice; Ronchi, Nicolo; Wu, Tian-Li; You, Shuzhen; Bakeroot, Benoit; Hu, Jie; Marcon, Denis; Stoffels, Steve; Decoutere, Stefaan (2016)