Browsing by author "Canato, E."
Now showing items 1-4 of 4
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Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: dependence on Mg-doping level
Rossetto, Isabella; Meneghini, Matteo; Canato, E.; Barbato, M.; Stoffels, Steve; Posthuma, Niels; Decoutere, Stefaan; Tallarico, Andrea; Meneghesso, Gaudenzio; Zanoni, Enrico (2017) -
Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors
Tajalli, A.; Canato, E.; Nardo, A.; Meneghini, M.; Stockman, Arno; Moens, P.; Zanoni, E.; Meneghesso, G. (2019) -
On the origin of the leakage current in p-gate AlGaN/GaN HEMTs
Stockman, Arno; Canato, E.; Tajalli, A.; Meneghini, M.; Meneghesso, G.; Zanoni, E.; Moens, P.; Bakeroot, Benoit (2018) -
μs-Range evaluation of threshold voltage instabilities of GaN-on-Si HEMTs with p-GaN gate
Canato, E.; Masin, F.; Borga, M.; Zanoni, E.; Meneghini, M.; Meneghesso, G.; Stockman, Arno; Banerjee, A.; Moens, P. (2019)