Browsing by author "Reed, R."
Now showing items 1-7 of 7
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Development of a resistive memory-based, radiation-hardened cache memory for space flight and mission-critical applications
Bennett, W.; Hooten, N.; Schrimpf, R.; Reed, R.; Alles, M.; Zhang, E.X.; Weeden-Wright, S.; Jurczak, Gosia; Linten, Dimitri; Fantini, Andrea (2014) -
Dynamic modeling of radiation induced state change in HfO2/Hf 1T1R RRAM
Linten, Dimitri; Bennett, W.; Hooten, N.; Schrimpf, R.; Reed, R.; Alles, M.; Zhang, E.X.; Weeden-Wright, S.; Jurczak, Gosia; Fantini, Andrea (2014) -
Laser-induced current transients in bulk FinFETs
El-Mamouni, F.; Zhang, E.X.; Hooten, N.; Schrimpf, R.D.; Reed, R.; Galloway, K.F.; McMarrow, D.; Warner, J.; Simoen, Eddy; Claeys, Cor (2011) -
Pulsed-laser induced single-event transients in InGaAs FinFETs on bulk silicon substrates
Gong, H.; Ni, K.; Zhang, E.X.; Sternberg, A. L.; Kuzub, J.A.; Alles, M.L.; Reed, R.; Fleetwood, D.; Schrimpf, R.; Waldron, Niamh; Kunert, Bernardette; Linten, Dimitri (2019) -
Single- and multiple-event induced upsets in HfO2/Hf 1T1R RRAM
Bennett, W.; Hooten, N.; Schrimpf, R.; Reed, R.; Mendenhall, M.H.; Alles, M.; Bi, J.; Zhang, E.; Linten, Dimitri; Jurczak, Gosia; Fantini, Andrea (2014) -
Total ionizing dose effects on strained Ge pMOS FinFETS on bulk Si
Zhang, E. Z; Fleetwood, D. M.; Hatchel, J. A.; Liang, C.; Reed, R.; Alles, M. L.; Schrimpf, R. D.; Linten, Dimitri; Mitard, Jerome; Chisholm, M. F.; Pantelides, S. T. (2017) -
Total-ionizing-dose response of hghly-scaled gate-all-around Si nanowire CMOS transistors
Gorchichko, Maria; Zhang, E.X.; Wang, P.; Schrimpf, R.; Reed, R.; Fleetwood, D.M.; Bonaldo, S.; Linten, Dimitri; Mitard, Jerome (2020)