Browsing by author "Bosman, Niels"
Now showing items 1-4 of 4
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Gate-all-around MOSFETs based on vertically stacked horizontal Si nanowires in a replacement metal gate process on bulk Si substrates
Mertens, Hans; Ritzenthaler, Romain; Hikavyy, Andriy; Kim, Min-Soo; Tao, Zheng; Wostyn, Kurt; Chew, Soon Aik; De Keersgieter, An; Mannaert, Geert; Rosseel, Erik; Schram, Tom; Devriendt, Katia; Tsvetanova, Diana; Dekkers, Harold; Demuynck, Steven; Vaisman Chasin, Adrian; Van Besien, Els; Dangol, Anish; Godny, Stephane; Douhard, Bastien; Bosman, Niels; Richard, Olivier; Geypen, Jef; Bender, Hugo; Barla, Kathy; Mocuta, Dan; Horiguchi, Naoto; Thean, Aaron (2016) -
Reverse tip sample scanning for precise and high-throughput electrical characterization of advanced nodes
Celano, Umberto; Hantschel, Thomas; Boehme, Thijs; Kanniainen, A.; Wouters, Lennaert; Bender, Hugo; Bosman, Niels; Drijbooms, Chris; Folkersma, Steven; Paredis, Kristof; Vandervorst, Wilfried; van der Heide, Paul (2019) -
The first observation of p-type electromigration failure in full ruthenium interconnects
Beyne, Sofie; Dutta, Shibesh; Varela Pedreira, Olalla; Bosman, Niels; Adelmann, Christoph; De Wolf, Ingrid; Tokei, Zsolt; Croes, Kristof (2018) -
Vertically stacked gate-all-around Si nanowire CMOS transistors with dual work function metal gates
Mertens, Hans; Ritzenthaler, Romain; Vaisman Chasin, Adrian; Schram, Tom; Kunnen, Eddy; Hikavyy, Andriy; Ragnarsson, Lars-Ake; Dekkers, Harold; Hopf, Toby; Wostyn, Kurt; Devriendt, Katia; Chew, Soon Aik; Kim, Min-Soo; Kikuchi, Yoshiaki; Rosseel, Erik; Mannaert, Geert; Kubicek, Stefan; Demuynck, Steven; Dangol, Anish; Bosman, Niels; Geypen, Jef; Carolan, Patrick; Bender, Hugo; Barla, Kathy; Horiguchi, Naoto; Mocuta, Dan (2016-12)