Browsing by author "Galloway, Kenneth F."
Now showing items 1-4 of 4
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Effect of ionizing radiation on defects and 1/f noise in Ge pMOSFETs
Zhang, Cher Xuang; Francis, Sarah Ashley; Zhang, En Xia; Fleetwood, Daniel M.; Schrimpf, Ronald D.; Galloway, Kenneth F.; Simoen, Eddy; Mitard, Jerome; Claeys, Cor (2011) -
Effect of ionizing radiation on defects and 1/f noise in Ge pMOSFETs
Zhang, Cher Xuan; Zhang, E. Xia; Fleetwood, Dan M.; Schrimpf, Ronald D; Galloway, Kenneth F.; Simoen, Eddy; Mitard, Jerome; Claeys, Cor (2010) -
Effects of halo doping and Si capping layer thickness on total-dose effects in Ge p-MOSFETs
Arora, Rajan; Simoen, Eddy; Zhang, En Xia; Fleetwood, Daniel M.; Schrimpf, Ronald D.; Galloway, Kenneth F.; Choi, Bo K.; Mitard, Jerome; Meuris, Marc; Claeys, Cor; Madan, Anuj; Cressler, John D. (2010) -
Effects of processing and radiation bias on leakage currents in Ge pMOSFETs
Zhang, Cher Xuan; Zhang, En Xia; Fleetwood, Daniel M.; Schrimpf, Ronald D.; Galloway, Kenneth F.; Simoen, Eddy; Mitard, Jerome; Claeys, Cor (2010)