Browsing by author "Ruzzarin, Maria"

Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs

Mukherjee, Kalparupa; Borga, Matteo; Ruzzarin, Maria; De Santi, Carlo; Stoffels, Steve; You, Shuzhen; Geens, Karen; Liang, Hu; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo (2020)

Evidence of hot-electron degradation in GaN-based MIS-HEMTs submitted to high temperature constant source current stress

Ruzzarin, Maria; Meneghini, Matteo; Rossetto, Isabella; Van Hove, Marleen; Stoffels, Steve; Wu, Tian-Li; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico (2016)

Exploration of gate trench module for vertical GaN devices

Ruzzarin, Maria; Geens, Karen; Borga, Matteo; Liang, Hu; You, Shuzhen; Bakeroot, Benoit; Decoutere, Stefaan; De Santi, Carlo; Neviani, Andrea; Meneghini, Matteo; Meneghesso, Gaudenzio; Zanoni, Enrico (2020)

Gate module study for performance improvement in vertical GaN device

Ruzzarin, Maria; Geens, Karen; Borga, Matteo; Liang, Hu; You, Shuzhen; Bakeroot, Benoit; Decoutere, Stefaan; De Santi, Carlo; Meneghini, Matteo; Meneghesso, Gaudenzio; Zanoni, Enrico (2021)

Negative bias-induced threshold voltage instability (NBTI) in GaN-on-Si power HEMTs

Meneghini, Matteo; Rossetto, Isabella; Bisi, Davide; Ruzzarin, Maria; Van Hove, Marleen; Stoffels, Steve; Wu, Tian-Li; Marcon, Denis; Decoutere, Stefaan; Meneghesso, Gaudio; Zanoni, Enrico (2016)

Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis

Rossetto, Isabella; Meneghini, Matteo; Rizzato, Vanessa; Ruzzarin, Maria; Favaron, Andrea; Stoffels, Steve; Van Hove, Marleen; Posthuma, Niels; Wu, Tian-Li; Marcon, Denis; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico (2016)

Threshold voltage variations in semi-vertical GaN-on-Si FETs: A comprehensive study

Mukherjee, Kalparupa; Borga, Matteo; Ruzzarin, Maria; Stoffels, Steve; Geens, Karen; Liang, Hu; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo (2019)