Browsing by author "Chan, D.S.H."
Now showing items 1-3 of 3
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Improved electrical and reliability characteristics of HfN/HfO2 gated nMOSFET with 0.95 nm EOT fabricated using a gate-first process
Kang, JinFeng; Yu, HongYu; Ren, C.; Wang, X.P.; Li, M.F.; Chan, D.S.H.; Yeo, Y.C.; Sa, N.; Yang, H.; Liu, X.Y.; Han, R.Q.; Kwong, D.L. (2005-04) -
Mechanism of positive-bias temperature instability in sub-1 nm TaN/HfN/HfO2 gate stack with low preexisting traps
Sa, N.; Kang, J.F.; Yang, H.; Liu, X.Y.; He, Y.D.; Han, R.Q.; Ren, C.; Yu, HongYu; Chan, D.S.H.; Kwong, D.-L. (2005-09) -
Scalability and reliability of TaN/HfN/HfO2 gate stack fabricated by a high temperature process
Kang, JinFeng; Yu, HongYu; Ren, C.; Yang, H.; Sa, N.; Liu, X.Y.; Han, R.Q.; Li, M.F.; Chan, D.S.H.; Kwong, D.L. (2005)