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Mechanism of positive-bias temperature instability in sub-1 nm TaN/HfN/HfO2 gate stack with low preexisting traps
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Authors
Sa, N.
;
Kang, J.F.
;
Yang, H.
;
Liu, X.Y.
;
He, Y.D.
;
Han, R.Q.
;
Ren, C.
;
Yu, HongYu
;
Chan, D.S.H.
;
Kwong, D.-L.
Issue
26
Journal
IEEE Electron Device Letters
Volume
9
Title
Mechanism of positive-bias temperature instability in sub-1 nm TaN/HfN/HfO2 gate stack with low preexisting traps
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Journal article
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