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Mechanism of positive-bias temperature instability in sub-1 nm TaN/HfN/HfO2 gate stack with low preexisting traps
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Mechanism of positive-bias temperature instability in sub-1 nm TaN/HfN/HfO2 gate stack with low preexisting traps
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Date
2005-09
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Sa, N.
;
Kang, J.F.
;
Yang, H.
;
Liu, X.Y.
;
He, Y.D.
;
Han, R.Q.
;
Ren, C.
;
Yu, HongYu
;
Chan, D.S.H.
;
Kwong, D.-L.
Journal
IEEE Electron Device Letters
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1944
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Acq. date: 2025-12-09
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Views
1944
since deposited on 2021-10-16
1
last month
1
last week
Acq. date: 2025-12-09
Citations